Effects of Floating-Gate Doping Concentration of Flash Cell Performance

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-08-15

著者

• Young K

  Winbond Electronics Corp. Hsinchu Twn

• Huang T‐y

  National Chiao Tung Univ. Hsinchu Twn

• HUANG Tiao-Yuan

  Department of Electronics Engineering, National Chiao Tung University

• Chao T

  National Chiao Tung Univ. Hsinchu Twn

• Lin C‐h

  Department Of Materials Science And Engineering Tsing-hut University

• HUANG Tiao-Yuan

  National Nano Device Laboratory

• LIN Horng-Chih

  National Nano Device Labs.

• Huang T-y

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• JONG Fuh-Cheng

  Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University

• LEU Len-Yi

  Winbond Electronics Corp.

• YOUNG Konrad

  Winbond Electronics Corp.

• LIN Chen-Hsi

  Winbond Electronics Corp.

• CHIU Kuang

  Winbond Electronics Corp.

• CHAO Tien

  National Nano Device Laboratories

• Huang Tiao-yuan

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University

• Chao T‐s

  Department Of Electrophysics National Chiao Tung University

• Chao Tien

  National Device Laboratory

• Lin Horng-chih

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  National Nano Device Lab.

• Jong F‐c

  Southern Taiwan Univ. Technol. Tainan County Twn

• Lin C‐h

  Department Of Physics National Cheng Kung University

• Lin Horng-chih

  National Chiao Tung University

• Lin Horng-Chin

  National Nano Device Laboratories

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