Lin Horng-Chin | National Nano Device Laboratories
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概要
関連著者
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Huang T‐y
National Chiao Tung Univ. Hsinchu Twn
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HUANG Tiao-Yuan
National Nano Device Laboratory
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LIN Horng-Chih
National Nano Device Labs.
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Huang T-y
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Lin Horng-chih
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Lin Horng-chih
Institute Of Electronics National Chiao Tung University
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Lin Horng-chih
National Nano Device Lab.
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Lin Horng-chih
National Chiao Tung University
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Lin Horng-Chin
National Nano Device Laboratories
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Lin Horng-chih
National Nano Device Laboratories
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Huang Tiao-yuan
Institute Of Electronics National Chiao Tung University:national Nano Device Laboratories
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HUANG Tiao-Yuan
Institute of Electronics, National Chiao Tung University
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Huang Tiao-yuan
Institute Of Electronics National Chiao Tung University
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Lee D‐y
Institute Of Electronics National Chiao Tung University
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LEE Da-Yuan
Institute of Electronics, National Chiao Tung University
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Lee Da-yuan
Institure Of Electronics National Chiao Tung University
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HUANG Tiao-Yuan
Department of Electronics Engineering, National Chiao Tung University
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Chao T
National Chiao Tung Univ. Hsinchu Twn
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JONG Fuh-Cheng
Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University
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Huang Tiao-yuan
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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Chao T‐s
Department Of Electrophysics National Chiao Tung University
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Chao Tien
National Device Laboratory
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Jong F‐c
Southern Taiwan Univ. Technol. Tainan County Twn
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Young K
Winbond Electronics Corp. Hsinchu Twn
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Wang T
National Chiao Tung Univ. Hsin‐chu Twn
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Lin C‐h
Department Of Materials Science And Engineering Tsing-hut University
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CHAO Tien-Sheng
National Nano Device Laboratories
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LEU Len-Yi
Winbond Electronics Corp.
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YOUNG Konrad
Winbond Electronics Corp.
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LIN Chen-Hsi
Winbond Electronics Corp.
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CHIU Kuang
Winbond Electronics Corp.
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Lin C‐h
Department Of Physics National Cheng Kung University
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Tsai Min-yu
Institute Of Electronics National Chiao Tung University
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Wang Meng-feng
Institute Of Electronics National Chiao Tung University
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Lin Chein-hsin
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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Chiu K
Winbond Electronics Corp. Hsinchu Twn
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LU Wen-Tai
Institute of Electronics, National Chiao-Tung University
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Lu Wen-tai
Institute Of Electronics National Chiao Tung University
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CHIANG Wan-Ju
Institute of Electronics, National Chiao Tung University
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WANG Tahui
Institute of Electronics, National Chiao Tung University
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Chiang Wan-ju
Institute Of Electronics National Chiao Tung University
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Lu Wen-Tai
National Nano Device Laboratories
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CHANG Chun-Yen
Department of Electronics Engineering, National Chiao Tung University
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Chien C‐h
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Chang Chun-yen
Instiute Of Electronics National Chiao-tang University
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Chang Chun-yen
Department Of The Electro-optical Engineering National Chiao Tung University
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WANG Meng-Fan
Institute of Electronics, National Chiao-Tung Universiry
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WANG Meng-Fan
Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University
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CHIEN Chao-Hsin
Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University
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CHAO Tien
National Nano Device Laboratories
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Wang M‐f
Institute Of Electronics National Chiao-tung Universiry
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Chang Chun-yen
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity
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WANG T.
Institute of Electronics, National Chiao Tung University
著作論文
- The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
- A Radiation-Hard Flash Cell Using Horn-Shaped Floating Gate and N_2O Annealing
- A Study on the Radiation Hardness of Flash Cell with Horn-Shaped Floating-Gate
- Effects of Floating-Gate Doping Concentration of Flash Cell Performance
- Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
- Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
- Enhanced Negative-Bias-Temperature Instability of P-Channel Metal-Oxide-Semiconductor Transistors due to Plasma Charging Damage
- Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide
- Enhanced Negative-Bias-Temperature Instability of P-Channel MOSFET by Plasma Charging Damage