Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide

スポンサーリンク

概要

• 論文の詳細を見る
• 2001-09-25

著者

• Huang T‐y

  National Chiao Tung Univ. Hsinchu Twn

• Wang T

  National Chiao Tung Univ. Hsin‐chu Twn

• HUANG Tiao-Yuan

  Institute of Electronics, National Chiao Tung University

• HUANG Tiao-Yuan

  National Nano Device Laboratory

• LIN Horng-Chih

  National Nano Device Labs.

• Huang T-y

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University:national Nano Device Laboratories

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  National Nano Device Laboratories

• Lin Horng-chih

  National Nano Device Lab.

• Lee D‐y

  Institute Of Electronics National Chiao Tung University

• Tsai Min-yu

  Institute Of Electronics National Chiao Tung University

• LEE Da-Yuan

  Institute of Electronics, National Chiao Tung University

• WANG T.

  Institute of Electronics, National Chiao Tung University

• Lee Da-yuan

  Institure Of Electronics National Chiao Tung University

• Lin Horng-chih

  National Chiao Tung University

• Lin Horng-Chin

  National Nano Device Laboratories

関連論文

• A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
• Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
• Ion-Implantation Treatment(Ba, Sr)TiO_3 Thin Films
• Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications
• Rapid-Thermal-Processed BaTiO_3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition
• Characteristics of Poly-Si Nanowire Thin Film Transistors with Double-Gated Structures
• Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal-Oxide-Semiconductor Field Effect Transistors
• Impacts of LP-SiN Capping Layer and Lateral Diffusion of interface Trap on Hot Carrier Stress of NMOSFETs
• A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETs
• The Effects of Dielectric Type and Thickness on the Characteristics of Dynamic Threshold Metal Oxide Semiconductor Transistors
• Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor : semiconductors
• Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
• Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
• The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
• The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
• A Radiation-Hard Flash Cell Using Horn-Shaped Floating Gate and N_2O Annealing
• A Study on the Radiation Hardness of Flash Cell with Horn-Shaped Floating-Gate
• Effects of Floating-Gate Doping Concentration of Flash Cell Performance
• The Role of a Resist During O_2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
• Characterization of Antenna Effect by Nondestructive Gate Current Measurement
• Epitaxy of Si_Ge_x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
• Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing
• Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
• Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
• Improvements on Electrical Characteristics of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors with HfO_2 Gate Stacks by Post Deposition N_2O Plasma Treatment
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
• The Effects of Low-Pressure Rapid Thermal Post-Annealing on the Properties of (Ba, Sr)TiO_3 Thin Films Deposited by Liquid Source Misted Chemical Deposition : Instrumentation, Measurement, and Fabrication Technology
• Leakage Current Reduction of Chemical-Vapor-Deposited Ta_2O_5 Films on Rugged Polycrystalline Silicon Electrode for Dynamic Random Access Memory Application
• Low Dielectric Constant Polymer Materials as Bottom Antirefiective Coating Layers for both KrF and ArF Lithography
• Devices Characteristics and Aggravated Negative Bias Temperature Instability in PMOSFETs with Uniaxial Compressive Strain
• Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
• Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
• Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
• Reduction of Off-State Leakage Current in Schottky Barrier Thin-Film Transistors (SBTFT) by a Field-Induced Drain
• Enhanced Negative-Bias-Temperature Instability of P-Channel Metal-Oxide-Semiconductor Transistors due to Plasma Charging Damage
• Conduction Mechanisms for Off-State Leakage Current of Schottky Barrier Thin-Film Transistors (SBTFT)
• Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide
• Enhanced Negative-Bias-Temperature Instability of P-Channel MOSFET by Plasma Charging Damage
• The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
• Poly-Si Nanowire Thin-Film Transistors with Inverse-T Gate
• Charge Pumping Profiling Technique for the Evaluation of Plasma-Charging-Enhanced Hot-Carrier Effect in Short-N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
• Breakdown Modes and Their Evolution in Ultrathin Gate Oxide
• Characteristics of Polycrystalline Silicon Thin-Film Transistors with Electrical Source/Drain Extensions Induced by a Bottom Sub-Gate
• Impacts of SiN Deposition Conditions on NMOSFETs
• Investigations of an Independent Double-Gated Polycrystalline Silicon Nanowire Thin Film Transistor for Nonvolatile Memory Operations
• A Novel Method for the Preparation of Si Nanowires
• Particle Emission from Low Energy Proton Bombardment of TiH_2 and TiD_2
• Effect of Strain on Static and Dynamic NBTI of pMOSFETs
• Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel
• Flow Behaviour of Aluminium-Based Materials at Ultrahigh Temperatures in the Presence of a Liquid Phase
• Effects of Plasma Damage on Metal–Insulator–Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistor Technology
• Novel Method of Converting Metallic-Type Carbon Nanotubes to Semiconducting-Type Carbon Nanotube Field-Effect Transistors
• The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
• Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Impacts of Low-Pressure Chemical Vapor Deposition-SiN Capping Layer and Lateral Distribution of Interface Traps on Hot-Carrier Stress of n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistors
• Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor
• The Role of a Resist During O2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
• Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
• Performance Improvement of Polycrystalline Silicon Nanowire Thin-Film Transistors by a High-$k$ Capping Layer
• Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2 Gate Stacks by Post Deposition N2O Plasma Treatment
• Characterizing the Channel Backscattering Behavior in Nanoscale Strained Complementary Metal Oxide Semiconductor Field-Effect Transistors
• Device Characteristics and Aggravated Negative Bias Temperature Instability in $ p$-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Uniaxial Compressive Strain
• A New Methodology for Probing the Electrical Properties of Heavily Phosphorous-Doped Polycrystalline Silicon Nanowires
• Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel
• Low-Pressure Crystallization of Sol–Gel-Derived PbZr0.52Ti0.48O3 Thin Films at Low Temperature for Low-Voltage Operation

もっと見る 閉じる

スポンサーリンク