Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-30

著者

• Tsai Ren-wei

  Institute Of Electronics National Chiao Tung University

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University

• Lin H‐c

  National Nano Device Laboratories

• Lin Horng-chih

  National Nano Device Lab.

• Yeh Kuan-lin

  Institute Of Electronics National Chiao Tung University

• LEE Ming

  Institute of Electronics, National Chiao Tung University

• Lee Ming

  Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  National Chiao Tung University

関連論文

• Characteristics of Poly-Si Nanowire Thin Film Transistors with Double-Gated Structures
• Impacts of LP-SiN Capping Layer and Lateral Diffusion of interface Trap on Hot Carrier Stress of NMOSFETs
• A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETs
• Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor : semiconductors
• Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
• Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
• The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
• The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
• A Radiation-Hard Flash Cell Using Horn-Shaped Floating Gate and N_2O Annealing
• A Study on the Radiation Hardness of Flash Cell with Horn-Shaped Floating-Gate
• Effects of Floating-Gate Doping Concentration of Flash Cell Performance
• Characterization of Antenna Effect by Nondestructive Gate Current Measurement
• Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
• Epitaxy of Si_Ge_x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
• Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
• A High-Temperature Thermodynamic Model for Metalorganic Vapor Phase Epitaxial Growth of InGaN
• Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
• An Elucidation of Solid Incorporation of InGaN Grown by Metalorganic Vapor Phase Epitaxy
• Crystalline Structure Changes in GaN Films Grown at Different Temperatures
• Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
• Leakage Current Reduction of Chemical-Vapor-Deposited Ta_2O_5 Films on Rugged Polycrystalline Silicon Electrode for Dynamic Random Access Memory Application
• Devices Characteristics and Aggravated Negative Bias Temperature Instability in PMOSFETs with Uniaxial Compressive Strain
• Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
• Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
• Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
• Reduction of Off-State Leakage Current in Schottky Barrier Thin-Film Transistors (SBTFT) by a Field-Induced Drain
• Enhanced Negative-Bias-Temperature Instability of P-Channel Metal-Oxide-Semiconductor Transistors due to Plasma Charging Damage
• Conduction Mechanisms for Off-State Leakage Current of Schottky Barrier Thin-Film Transistors (SBTFT)
• Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide
• Enhanced Negative-Bias-Temperature Instability of P-Channel MOSFET by Plasma Charging Damage
• Charge Pumping Profiling Technique for the Evaluation of Plasma-Charging-Enhanced Hot-Carrier Effect in Short-N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
• Breakdown Modes and Their Evolution in Ultrathin Gate Oxide
• Characteristics of Polycrystalline Silicon Thin-Film Transistors with Electrical Source/Drain Extensions Induced by a Bottom Sub-Gate
• Impacts of SiN Deposition Conditions on NMOSFETs
• A Novel Method for the Preparation of Si Nanowires
• Effect of Strain on Static and Dynamic NBTI of pMOSFETs
• Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel
• Effects of Plasma Damage on Metal–Insulator–Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistor Technology
• Novel Method of Converting Metallic-Type Carbon Nanotubes to Semiconducting-Type Carbon Nanotube Field-Effect Transistors
• The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
• Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• The Role of a Resist During O2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
• Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
• Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2 Gate Stacks by Post Deposition N2O Plasma Treatment
• Characterizing the Channel Backscattering Behavior in Nanoscale Strained Complementary Metal Oxide Semiconductor Field-Effect Transistors
• Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel
• Low-Pressure Crystallization of Sol–Gel-Derived PbZr0.52Ti0.48O3 Thin Films at Low Temperature for Low-Voltage Operation

もっと見る 閉じる

スポンサーリンク