Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel

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概要

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• Schottky barrier thin-film transistors (SB TFT) with field-induced drain (FID) have recently been demonstrated to exhibit ambipolar capability with low off-state leakage current. In this study, we investigate and compare the characteristics of poly-Si SB TFTs with channel layer prepared by excimer laser crystallization (ELC) and solid-phase crystallization (SPC). It is shown that the use of ELC could greatly improve the device characteristics, comparing to the SPC counterparts. Excellent device performance with steep subthreshold slope and on/off current ratio higher than $10^{8}$ for both p- and n-channel operations are demonstrated on a single device with ELC channel. The effects of sub-gate bias, channel length, and channel offset length, on device characteristics are also explored.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-04-15

著者

• Tsai Ren-wei

  Institute Of Electronics National Chiao Tung University

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University

• Yeh Kuan-lin

  Institute Of Electronics National Chiao Tung University

• Lee Ming

  Institute Of Electronics National Chiao Tung University

• Lin Horng-chih

  National Chiao Tung University

• Lee Ming

  Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu 300, Taiwan

• Tsai Ren-Wei

  Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu 300, Taiwan

• Huang Tiao-Yuan

  Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu 300, Taiwan

• Yeh Kuan-Lin

  Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu 300, Taiwan

• Lin Horng-Chih

  National Nano Device Laboratories, 1001-1 Ta-Hsueh Rd., Hsin-Chu 300, Taiwan

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