Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition

スポンサーリンク

概要

• 論文の詳細を見る

• We have proposed and successfully demonstrated a novel process for fabricating a lightly doped drain (LDD) polysilicon thin-film transistor (poly-Si TFT). The oxide sidewall spacer in the new process is formed by a simple one-step selective liquid phase deposition (LPD) at 23°C. In contrast with conventional methods, this new process does not require an additional photolithographic step for defining the non-self-aligned offset gate, or the deposition of an oxide layer and subsequent etch-back to form the self-aligned sidewall spacer. Devices fabricated by the new process have a lower leakage current and a better ON/OFF current ratio, compared with non-LDD control devices. The new device also shows excellent current saturation characteristics at high bias and better has hot-carrier endurance. Since the apparatus used for LPD oxide deposition is simple and inexpensive, the new process appears to be promising for future high-performance poly-Si TFT fabrication.

• 2000-10-15

著者

• Huang Tiao-yuan

  Institute Of Electronics National Chiao Tung University

• CHANG Ting-Chang

  National Nano Device Laboratories

• Yeh Ching-fa

  Institute Of Electronics National Chiao Tang University

• Shih Po-sheng

  Institute Of Electronics National Chiao Tung University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories

• Yeh Ching-Fa

  Institute of Electronics, National Chiao Tung University, Taiwan, R.O.C.

• Huang Tiao-Yuan

  Institute of Electronics, National Chiao Tung University, Taiwan, R.O.C.

関連論文

• Experimental Comparison of Off-State Current between High-Temperature- and Low-Temperature-Processed Undoped Channel Polysilicon Thin-Film Trarnsistors
• TiWN Schottky Contacts to n-Ga_In_P
• Characteristics of Poly-Si Nanowire Thin Film Transistors with Double-Gated Structures
• Impacts of LP-SiN Capping Layer and Lateral Diffusion of interface Trap on Hot Carrier Stress of NMOSFETs
• A novel method to convert metallic-type CNTs to semiconducting-type CNT-FETs
• Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
• Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
• Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
• Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
• Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
• Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
• Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Direct Oxidation of Si_Ge_x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen
• Epitaxy of Si_Ge_x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
• Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique
• Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
• Dual-Band Mixer Design(RF, Analog Circuit and Device Technologies)
• Electrical and Optical Characteristics of an a-Si:H/c-Si Heterojunction Switch
• A CMOS Low-Noise Amplifier for Ultra Wideband Wireless Applications(Wide Band Systems)
• Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
• Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H_2 Plasma Treatment
• The Characterization of Al_2O_3 Prepared by Anodic Oxidation
• Back-Gating Effects on the Ga_In_P/InP/InGaAs High-Electron-Mobility Transistor
• Cation Source Dependence of Ga_In_P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
• New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current
• Leakage Current Reduction of Chemical-Vapor-Deposited Ta_2O_5 Films on Rugged Polycrystalline Silicon Electrode for Dynamic Random Access Memory Application
• Effects of N_2O-Plasma Treatment of a-SiO_xN_y/a-SiN_x Gate Insulators on Electrical Stability of a-Si:H Thin-Film Transistors
• Orientation Dependence of Coherent Hole Oscillations in GaAs/AlGaAs Coupled Quantum Wells
• Molecular Beam Epitaxy Grown GaAs Bipolar-Unipolar Transition Negative Differential Resistance Power Transistor
• A Novel Thin-Film Transistor with Vertical Offset Structure
• Hydrogenated Amorphous Silicon Carbide P-I-N Thin-Film Light-Emitting Diodes with Barrier Layers Inserted at P-I Interface
• Devices Characteristics and Aggravated Negative Bias Temperature Instability in PMOSFETs with Uniaxial Compressive Strain
• Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
• Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
• Effects of Fluorine Incorporation on the Negative-Bias-Temperature Instability (NBTI) of P-Channel MOSFETs
• Reduction of Off-State Leakage Current in Schottky Barrier Thin-Film Transistors (SBTFT) by a Field-Induced Drain
• Enhanced Negative-Bias-Temperature Instability of P-Channel Metal-Oxide-Semiconductor Transistors due to Plasma Charging Damage
• Conduction Mechanisms for Off-State Leakage Current of Schottky Barrier Thin-Film Transistors (SBTFT)
• Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide
• Enhanced Negative-Bias-Temperature Instability of P-Channel MOSFET by Plasma Charging Damage
• Double Graded-Gap a-SiC:H P-I-N Thin-Film LED with Composition-Graded N-Layer and Carbon-Increasing P-Layer
• A Study on Bilateral Latch-Up Self-Triggering in Complementary Metal-Oxide-Semiconductor Protection Circuits
• Charge Loss Due to AC Program Disturbance Stresses in EPROMs
• Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device
• A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage
• Direct Measurement of Electrical Hysteresis of Micron-Sized Pb(Zr, Ti)O_3 Capacitors using the Constant Current Method
• The Effect of Temperature on I-V Characteristics of a-Si:H Photodiode
• Characteristics of Polycrystalline Silicon Thin-Film Transistors with Electrical Source/Drain Extensions Induced by a Bottom Sub-Gate
• Impacts of SiN Deposition Conditions on NMOSFETs
• Effect of Strain on Static and Dynamic NBTI of pMOSFETs
• Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel
• Improved electrical characteristics of Pt/Gd_2O_3/GaAs MOS capacitors with surface preparation procedures
• Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer
• Reliability of Strained SiGe Channel p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ultra-Thin ($\text{EOT}=3.1$ nm) N2O-Annealed SiN Gate Dielectric
• Deep Sub-Micron Strained Si_Ge_ Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N_2O-Annealed SiN Gate Dielectric
• The Novel Preparation of P-N Junction Mesa Diodes by Silicon-Wafer Direct Bonding (SDB)
• Effects of Plasma Damage on Metal–Insulator–Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal–Oxide–Semiconductor Field-Effect Transistor Technology
• Deep Sub-Micron Strained Si0.85Ge0.15 Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N2O-Annealed SiN Gate Dielectric
• Novel Method of Converting Metallic-Type Carbon Nanotubes to Semiconducting-Type Carbon Nanotube Field-Effect Transistors
• The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation
• Investigation of Thermal Coefficient for Polycrystalline Silicon Thermal Sensor Diode
• The Role of a Resist During O2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
• Triangular Current: Method for Measuring Hysteresis Loops of Ferroelectric Capacitors
• Electrical Characteristics of Thin HfO2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
• Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
• Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of Low-$k$ Hydrogen Silisesquioxane
• Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2 Gate Stacks by Post Deposition N2O Plasma Treatment
• Characterizing the Channel Backscattering Behavior in Nanoscale Strained Complementary Metal Oxide Semiconductor Field-Effect Transistors
• Switching Current Study: Hysteresis Measurement of Ferroelectric Capacitors using Current–Voltage Measurement Method
• Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel
• A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage
• Low-Pressure Crystallization of Sol–Gel-Derived PbZr0.52Ti0.48O3 Thin Films at Low Temperature for Low-Voltage Operation

もっと見る 閉じる

スポンサーリンク