Deep Sub-Micron Strained Si0.85Ge0.15 Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N2O-Annealed SiN Gate Dielectric

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概要

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• We have investigated the electrical characteristics of strained Si0.85Ge0.15 channel p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ultra-thin N2O-annealed SiN gate dielectric. We have found that the thickness of SiGe channel has a great impact on the device characteristics. With controlling the SiGe layer thickness thinner than 15 nm, the device depict a subthreshold swing of 68 mV/A, the interface state density of $1\times 10^{11}$ eV-1$\cdot$cm-2, acceptable junction leakage, and more than 50% hole mobility improvement with respect to the Si channel device. Therefore, high quality interface between the gate dielectric and the strained SiGe channel can be achieved by using the N2O-annealed SiN gate dielectric.

• 2005-02-10

著者

• CHIEN Chao-Hsin

  National Nano Device Laboratories

• Hsu Shih-lu

  National Nano Device Laboratory

• Chen Yi-cheng

  Institute Of Electronics National Chiao-tung University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories

• Chen Ching-wei

  Institute Of Electronics National Chiao-tung University

• Chien Chao-Hsin

  National Nano Device Laboratory, Hsinchu, 300, Taiwan

• Chang Chun-Yen

  Institute of Electronics, National Chiao-Tung University, Hsinchu, 300, Taiwan

• Hsu Shih-Lu

  National Nano Device Laboratory, Hsinchu, 300, Taiwan

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