Electrical Characteristics of Thin HfO_2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-01-15
著者
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Chang Chun-yen
Institute Of Electronics National Chiao Tung University
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Yang M‐j
Kyushu Univ. Fukuoka Jpn
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CHIEN Chao-Hsin
National Nano Device Laboratories
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Tsui Bing-yue
Institute Of Electronics National Chiao-tung University
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Lehnen Peer
Aixtron Ag Kackertstr
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YANG Ming-Jui
National Nano Device Laboratory
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CHEN Ching-Wei
Institute of Electronics, National Chiao-Tung University
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PERNG Tsu-Hsiu
Institute of Electronics, National Chiao-Tung University
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LIANG Jann-Shyang
Institute of Electronics, National Chiao-Tung University
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Yang Ming-jui
National Nano Device Laboratories
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Perng Tsu-hsiu
Institute Of Electronics National Chiao-tung University
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