Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• Hong Jyh-wong

  Department Of Electrical Engineering National Central University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tung University

• Laih L‐h

  Chunghwa Telecom Co. Ltd. Taoyuan Twn

• CHEN Yen-Ann

  Department of Electrical Engineering, National Central University

• LAIH Li-Hong

  Department of Electrical Engineering, National Central University

• TSAY Wen-Chin

  Department of Electrical Engineering, National Central University

• CHEN Jyh-Shin

  Precision Instrument Development Center

• CHEN Jyh-Kuan

  Department of Electrical Engineering, National Central University

• Chen Yen-ann

  Department Of Electrical Engineering National Central University

• Chang C‐y

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

関連論文

• Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
• Passivation of GaAs Power Field-Effect Transistor Using Electron Cyclotron Resonance Chemical Vapor Deposition Silicon Nitride Technique
• TiWN Schottky Contacts to n-Ga_In_P
• Improvement of Current Injection of Porous Silicon
• Improving the Transient Response of a Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe:H Film
• Improving Transient Response of Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe Film
• Improvement of Current Injection of Porous Silicon
• Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
• Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer
• Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
• Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
• The Role of a Resist During O_2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
• Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
• Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
• Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
• Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
• Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Direct Oxidation of Si_Ge_x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen
• Epitaxy of Si_Ge_x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
• Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique
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• Orientation Dependence of Coherent Hole Oscillations in GaAs/AlGaAs Coupled Quantum Wells
• Molecular Beam Epitaxy Grown GaAs Bipolar-Unipolar Transition Negative Differential Resistance Power Transistor
• A Novel Thin-Film Transistor with Vertical Offset Structure
• Hydrogenated Amorphous Silicon Carbide P-I-N Thin-Film Light-Emitting Diodes with Barrier Layers Inserted at P-I Interface
• Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
• The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
• Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
• Low-Temperature Process to Improve the Leakage Current of (Ba, Sr)TiO_3 Films on Pt/TiN/Ti/Si Substrates
• The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO_3 Thin Films at Low Substrate Temperatures
• Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO_3/Pt Capacitors at Low Substrate Temperatures
• Double Graded-Gap a-SiC:H P-I-N Thin-Film LED with Composition-Graded N-Layer and Carbon-Increasing P-Layer
• The Elimination of Inversion Domains in MBE-GaN Grown Using Low Temperature Nitridation
• Growth of GaN on Si (111) using simultaneous AlN/α-Si_3N_4 buffer structure
• A Study on Bilateral Latch-Up Self-Triggering in Complementary Metal-Oxide-Semiconductor Protection Circuits
• Charge Loss Due to AC Program Disturbance Stresses in EPROMs
• Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device
• Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
• A method for suppressing deep-level emission in ZnSe/Ge/Ge_xSi_/Si structure
• Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
• New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique : Instrumentation, Measurement, and Fabrication Technology
• A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage
• Direct Measurement of Electrical Hysteresis of Micron-Sized Pb(Zr, Ti)O_3 Capacitors using the Constant Current Method
• Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer
• Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO3/Pt Capacitors at Low Substrate Temperatures
• Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
• The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO3 Thin Films at Low Substrate Temperatures

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