The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO3 Thin Films at Low Substrate Temperatures

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概要

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• The amorphous (Ba,Sr)TiO3 ($\alpha$-BST) films sputtered onto the Pt/TiN/Ti/Si substrates are greatly improved using the excimer laser annealing (ELA) technique of wavelength 248 nm at low substrate temperature 300°C. The dielectric constant of the $\alpha$-BST film is remarkably enhanced from 80 to over 250 after ELA treatment. The heat conduction analysis indicates that a very shallow light absorption depth of the wavelength 248 nm for the BST film behaves an excellent thermal property, which doesn't damage the underlayer films during ELA treatment. Besides, the leakage current of ELA-BST films is strongly influenced by the laser energy fluence (LEF). The detailed mechanisms of the crystallinity and the electric properties are systematically studied in this report.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-04-15

著者

• CHEN Jyh-Shin

  Precision Instrument Development Center

• Chiou Bi-shiou

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Shye Der-chi

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Cheng Huang-chung

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University

• Hsu Hsien-wen

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Jaing Cheng-chung

  Precision Instrument Development Center (pidc)

• Hwang Chuan-chou

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chiou Bi-Shiou

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan R.O.C.

• Shye Der-Chi

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan R.O.C.

• Cheng Huang-Chung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan R.O.C.

• Jaing Cheng-Chung

  Precision Instrument Development Center (PIDC), 20 R&D Road VI, Hsingchu Science-Based Industrial Park, Hsinchu 300, Taiwan R.O.C.

• Hsu Hsien-Wen

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan R.O.C.

• Hwang Chuan-Chou

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan R.O.C.

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