Effect of the Tantalum Barrier Layer on the Electromigration and Stress Migration Resistance of Physical-Vapor-Deposited Copper Interconnect

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-05-15

著者

• Wu Wen-fa

  National Nano Device Laboratories

• CHIOU Bi-Shiou

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• Chiou B‐s

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chin Y‐l

  National Chiao Tung Univ. Hsinchu Twn

• Chiou Bi-shiou

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• CHIN Yu-Lung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University,

• Chin Yu-lung

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

関連論文

• Bi-Mode Breakdown Test Methodology of Ultrathin Oxide
• Characteristics of Oxide Breakdown and Related Impact on Device of Ultrathin (2.2 nm) Silicon Dioxide
• Novel Chip Standby Current Prediction Model and Ultrathin Gate Oxide Scaling Limit(Semiconductors)
• Effect of the Tantalum Barrier Layer on the Electromigration and Stress Migration Resistance of Physical-Vapor-Deposited Copper Interconnect
• Effect of Aluminum Seed Layer on the Crystallographic Texture and Electromigration Resistance of Physical Vapor Deposited Copper Interconnect
• Analysis of Average Transport Critical Current Density of Oxide Superconductors Deposited on a Silver Base
• The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO_3 Thin Films at Low Substrate Temperatures
• Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO_3/Pt Capacitors at Low Substrate Temperatures
• Titanium Nitride Membrane Application to Extended Gate Field Effect Taansistor pH Sensor Using VLSI Technology : Semiconductors
• Impacts of Cu/TaN Electrode on the Electrical Properties of Metal-insulator-metal (Ba,Sr)TiO_3 Thin-film Capacitors
• Improving Electrical Properties and Thermal Stability of (Ba,Sr)TiO_3 Thin Films on Cu(Mg) Bottom Electrodes
• Repairing of Etching-Induced Damage of High-k Ba_Sr_TiO_3 Thin Films by Oxygen Surface Plasma Treatment
• Improving Characteristics of Tantalum Oxide Thin Film Devices with Copper Electrodes
• Effect of Nitrogen Plasma Treatment on Electrical Characteristics for Pd Nanocrystals in Nonvolatile Memory
• DC Field Dependence of the Dielectric Characteristics of Doped Ba0.65Sr0.35TiO3 with Various Grain Sizes in the Paraelectric State
• Characteristics of Oxide Breakdown and Related Impact on Device of Ultrathin (2.2 nm) Silicon Dioxide
• Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO3/Pt Capacitors at Low Substrate Temperatures
• Effect of Thermal Annealing or Plasma Treatment on Analog Characteristics for High-$k$ Material Capacitors
• Improving Electrical Properties and Thermal Stability of (Ba,Sr)TiO3 Thin Films on Cu(Mg) Bottom Electrodes
• Repairing of Etching-Induced Damage of High-$k$ Ba0.5Sr0.5TiO3 Thin Films by Oxygen Surface Plasma Treatment
• Bi-Mode Breakdown Test Methodology of Ultrathin Oxide
• Improving Dielectric Loss and Mechanical Stress of Barium Strontium Titanate Thin Films by Adding Chromium Layer
• Dependence of Ferroelectric Characteristics on the Deposition Temperature of (Pb,Sr)TiO3 Films
• The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO3 Thin Films at Low Substrate Temperatures
• Effects of Underlayer Dielectric on the Thermal Characteristics and Electromigration Resistance of Copper Interconnect

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