Bi-Mode Breakdown Test Methodology of Ultrathin Oxide
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-12-15
著者
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Sun Jack
Taiwan Semiconductor Manufacturing Co. R&d
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Lee K‐h
Taiwan Semiconductor Manufacturing Co. R&d
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Lee Kuo-hua
Taiwan Semiconductor Manufacturing Co. R&d
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Wu Shien-Yang
Taiwan Semiconductor Manufacturuing Company
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SU Hung-Der
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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CHIOU Bi-Shiou
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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KO Chin-Yuan
Taiwan Semiconductor Manufacturing Co., RA
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CHANG Ming-Hsung
Taiwan Semiconductor Manufacturing Co., R&D
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CHEN Yung-Shun
Taiwan Semiconductor Manufacturing Co., R&D
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CHAO Chih-Ping
Taiwan Semiconductor Manufacturing Co., R&D
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SEE Yee-Chaung
Taiwan Semiconductor Manufacturing Co., R&D
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Chiou B‐s
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Wu Shien-yang
Taiwan Semiconductor Manufacturing Co. R&d
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- Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- Novel Amorphous-Silicon-Based Double-Metal Antifuse with Barrier Enhancement Layer
- Characteristics of Oxide Breakdown and Related Impact on Device of Ultrathin (2.2 nm) Silicon Dioxide
- Bi-Mode Breakdown Test Methodology of Ultrathin Oxide
- Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors