Novel Chip Standby Current Prediction Model and Ultrathin Gate Oxide Scaling Limit(Semiconductors)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-01-15
著者
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Sun Jack
Taiwan Semiconductor Manufacturing Co. R&d
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Lee K‐h
Taiwan Semiconductor Manufacturing Co. R&d
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Lee Kuo-hua
Taiwan Semiconductor Manufacturing Co. R&d
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SU Hung-Der
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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CHIOU Bi-Shiou
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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CHANG Ming-Hsung
Taiwan Semiconductor Manufacturing Co., R&D
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CHAO Chih-Ping
Taiwan Semiconductor Manufacturing Co., R&D
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LU Ping-Chiang
Taiwan Semiconductor Manufacturing Co., R&D
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SEE Yee-Chanung
Taiwan Semiconductor Manufacturing Co., R&D
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Chiou B‐s
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Chiou Bi-shiou
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Su Hung-der
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Lu Ping-chiang
Taiwan Semiconductor Manufacturing Co. R&d
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See Yee-chanung
Taiwan Semiconductor Manufacturing Co. R&d
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Chao Chih-ping
Taiwan Semiconductor Manufacturing Co. R&d
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Chang Ming-hsung
Taiwan Semiconductor Manufacturing Co. R&d
関連論文
- Application of Technology CAD in Process Development for High Performance Logic and System-on-Chip in IC Foundry (Special lssue on SISPAD'99)
- Bi-Mode Breakdown Test Methodology of Ultrathin Oxide
- Characteristics of Oxide Breakdown and Related Impact on Device of Ultrathin (2.2 nm) Silicon Dioxide
- Novel Chip Standby Current Prediction Model and Ultrathin Gate Oxide Scaling Limit(Semiconductors)
- Effect of the Tantalum Barrier Layer on the Electromigration and Stress Migration Resistance of Physical-Vapor-Deposited Copper Interconnect
- Effect of Aluminum Seed Layer on the Crystallographic Texture and Electromigration Resistance of Physical Vapor Deposited Copper Interconnect
- Analysis of Average Transport Critical Current Density of Oxide Superconductors Deposited on a Silver Base
- The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO_3 Thin Films at Low Substrate Temperatures
- Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO_3/Pt Capacitors at Low Substrate Temperatures
- Novel Amorphous-Silicon-Based Double-Metal Antifuse with Barrier Enhancement Layer
- DC Field Dependence of the Dielectric Characteristics of Doped Ba0.65Sr0.35TiO3 with Various Grain Sizes in the Paraelectric State
- Characteristics of Oxide Breakdown and Related Impact on Device of Ultrathin (2.2 nm) Silicon Dioxide
- Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO3/Pt Capacitors at Low Substrate Temperatures
- Bi-Mode Breakdown Test Methodology of Ultrathin Oxide
- Improving Dielectric Loss and Mechanical Stress of Barium Strontium Titanate Thin Films by Adding Chromium Layer
- Dependence of Ferroelectric Characteristics on the Deposition Temperature of (Pb,Sr)TiO3 Films
- The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO3 Thin Films at Low Substrate Temperatures
- Effects of Underlayer Dielectric on the Thermal Characteristics and Electromigration Resistance of Copper Interconnect