Dependence of Ferroelectric Characteristics on the Deposition Temperature of (Pb,Sr)TiO3 Films

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概要

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• The pulsed laser deposition (PLD) of (Pb,Sr)TiO3 (PSrT) films on Pt/SiO2/Si at low substrate temperatures ($T_{\text{s}}$), ranging from 300 to 450 °C, has been investigated. The PLD PSrT films prepared at low $T_{\text{s}}$ exhibit ferroelectric properties, good crystallinity, and no significant interdiffusion between the PSrT film and the Pt bottom electrode. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole–Frenkel emission at high electric fields. PSrT films grown at appropriate $T_{\text{s}}$ yield fewer interface states and fewer trapping states, leading to a smaller leakage current. The enhanced (100) preferred orientation of PSrT films deposited at $T_{\text{s}}=350--400$ °C exhibits optimum ferroelectricity. In addition, the dielectric constant and ferroelectricity are associated with the preferred orientation. This shows that the electrical characteristics strongly rely on the preferred orientation and trapping states, which could be controlled by varying the substrate temperature ($T_{\text{s}}\leq 450$ °C) during PLD.

• 2007-10-15

著者

• Chou Chen-chia

  Department Of Mechanical Engineering National Taiwan University

• Wang Jyh-liang

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chiou Bi-shiou

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Shye Der-chi

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lai Yi-sheng

  Department Of Materials Science And Engineering National Cheng Kung University

• Cheng Huang-chung

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University

• Juan Chuan-ping

  Department Of Electrical Engineering St. John's University

• Chou Chen-Chia

  Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan

• Chiou Bi-Shiou

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 30010, Taiwan

• Cheng Huang-Chung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 30010, Taiwan

• Juan Chuan-Ping

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 30010, Taiwan

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