Fabrication and Characterization of Carbon Nanotube Triodes

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概要

• 論文の詳細を見る

• To achieve high emission current density, carbon nanotube triodes have been proposed using recessed oxide as the insulator between the gate and the carbon nanotubes to replace the conventional spacer. An anode current of 10 $\mu$A was achieved with a gate voltage of 98 V for a nanotube sample prepared with a growth time of 12 min. Carbon nanotubes synthesized with various growth times were analyzed using a scanning electron microscope and Raman spectroscopy. By increasing the growth time, longer carbon nanotubes were obtained. Effects of the length of the carbon nanotubes on the field emission of the triodes are discussed. Enhanced luminance was obtained as the anode voltage increased from 600 V to 1000 V@. Such carbon nanotube triodes are promising for utilization in future field-emission displays.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2001-05-15

著者

• Lin Jia-bin

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chen Li-chyong

  Center For Condensed Matter Sciences National Taiwan University

• Cheng Huang-chung

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University

• Chen Kuei-hsien

  Institute Of Atomic And Molecular Sciences Academia Sinica

• Chen Kuo-ji

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chen Li-Chyong

  Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan, R.O.C.

• Tarntair Fu-Gow

  Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University

• Hong Wei-Kai

  Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University

• Lin Jia-Bin

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan, R.O.C.

• Cheng Huang-Chung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan, R.O.C.

• Chen Kuo-Ji

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan, R.O.C.

• Hong Wei-Kai

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan, R.O.C.

• Tarntair Fu-Gow

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan, R.O.C.

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