Excellent Emission Characteristics of Tunneling Oxides Formed Using Ultrathin Silicon Films for Flash Memory Devices

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-06-15

著者

• Chen H‐c

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Cheng H‐c

  National Tsing Hua Univ. Hsinchu Twn

• Cheng Huang‐chung

  Nano Electronics And Display Technology Lab. Department Of Electronics Engineering And Institute Of

• CHENG Huang-Chung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• KU Tzu-Kun

  Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University

• WANG Ping-Wei

  Department of Electronics Engineering and Institute of Electronics, Semiconductor Research Center, N

• SU Huan-Ping

  Department of Electronics Engineering and Institute of Electronics, Semiconductor Research Center, N

• HONG Gary

  United Microelectronics Corporation (UMC)

• Hong Garry

  Central Integration Division, United Microelectronics Corporation

• Wang Ping-wei

  Department Of Electronics Engineering And Institute Of Electronics Semiconductor Research Center Nat

• Su H‐p

  Department Of Electronics Engineering And Institute Of Electronics Semiconductor Research Center Nat

• Su Huan-ping

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University

• Hong G

  Rodel‐nitta Co. Nara Jpn

• Ku Tzu-kun

  Department Of Electronics Engineering And Institute Of Electronics Semiconductor Research Center Nat

• Cheng Huang-chung

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University

• Hong Gary

  Specialty Techology Division United Microelectronics Corporation

• Hong Gary

  United Microelectronics Cooperation, Hsin-Chu, Taiwan, ROC

関連論文

• Microcrystalline SiC Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at Low Temperatures
• A Quasi-planar Thin Film Field Emission Diode
• Improvement of Luminescent Uniformity via Synthesizing the Carbon Nanotubes on a Fe-Ti Co-deposited Catalytic Layer
• Field Emission Improvement through Structure of Intermixture of Long and Short Carbon Nanotubes
• Field Emission Improvement from Pillar Array of Aligned Carbon Nanotubes
• Improvement of Breakdown Field of Carbon Nanotubes by a Ti-Capping Layer on Catalyst Nanopaticles
• Constraining the Direction of Carbon Nanotubes by Oxide Capping Layer
• Improved Field-Emission Properties of Carbon Nanotube Field-Emission Arrays by Controlled Density Growth of Carbon Nanotubes
• Fabrication and Characterization of Lateral Field Emission Device Based On Carbon Nanotubes
• Effects of High-Density Oxygen Plasma Posttreatment on Field Emission Properties of Carbon Nanotube Field-Emission Displays
• Fabrication and Characterization of lateral Field Emission Device Based on Carbon Nanotubes
• Improvement of Field Emission Characteristics of Carbon Nanotubes by Excimer Laser Treatment
• Fabrication and Characterization of Carbon Nanotube Triodes
• A Field-Emission Device with Novel Self-Focus Gate Structure
• High-Performance LTPS-TFTs Fabricated by Continuous Wave Laser Annealing
• Polarization Degradation and Breakdown of Pulse-Laser-Deposited (Pb,Sr)TiO_3 Films at Low Temperatures
• Field-Emission Properties of Aligned Carbon Nanotubes
• Fabrication and Characterization of Various Carbon-Clad Silicon Microtips with Ultra-Small Tip Radii
• Effects of Helicon-Wave-Plasma Etching on the Charging Damage of Aluminum Interconnects
• Charging Damages to Gate Oxides in a Helicon O_2 Plasma
• Antenna Charging Effects on the Electrical Characteristics of Polysilicon Gate during Electron Cyclotron Resonance Etching
• Effects of Polysilicon Electron Cyclotron Resonance Etching on Electrical Characteristics of Gate Oxides
• Fabrication and Characterization of the Pd-Silicided Emitters for Field-Emission Devices
• Characterization and Fabrication of Chimney-Shaped Metal Field Emitters
• Fabrication and Characterization of Diamond-Clad Silicon Field Emitter Arrays
• Simulation of the Electrical Characteristics of Field Emission Triodes with Various Gate Structures
• A New Fabrication Technology for Field-Emission Triodes with Emitter-Gate Separation of 0.18 μm
• Excellent Emission Characteristics of Tunneling Oxides Formed Using Ultrathin Silicon Films for Flash Memory Devices
• Electrical Characteristics of Thirn-Film Transistors with Double-Active-Layer Structure
• A New Portrayal of Oxidation of Undoped Polycrystalline Silicon Films in a Short Duration
• Low-Temperature Formation of Palladium Silicided Shallow p^+n Junctions Using Implant through Metal Technology
• A Capacitance Ratio Method Used for L_ Extraction of an Advanced Metal-Oxide-Semiconductor Device with Halo Implant
• A Modified Capacitance-Voltage Method Used for L_ Extraction and Process Monitoring in Advanced 0.15μm Complementary Metal-Oxide-Semiconductor Technology and Beyond
• Investigation of A 450V Rating Silicon-On-Insulator Lateral-Double-Diffused-Metal-Oxide-Semiconductor Fabrication by 12/25/5/40V Bipolar-Complementary Metal-Oxide-Semiconductor Double-Diffused Metal-Oxide-Semiconductor Process on Bulk Silicon Substrate
• Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor
• Characterizing Trench-Gate Power Metal-Oxide-Semiconductor Field Effect Transistor with Multi-Layer Dielectrics at the Trench Bottom
• The C-R Method Used for Leff Extraction and Process Optimization in Nano N/P-MOSFET's Devices
• The C-R Method Used for Leff Extraction and Process Optimization in Nano N/P-MOSFET's Devices
• Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
• High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
• Performance and Reliability Trade-off of Large-Tilted-Angle Implant P-Pocket on Stacked-Gate Memory Devices
• A New Ultra Low Voltage Silicon-Rich-Oxide (SRO) NAND Cell
• Investigation of a High Quality and Ultraviolet-Light Transparent Plasma-Enhanced Chemical Vapor Deposition Silicon Nitride Film for Non-Volatile Memory Application
• Generalized Interconnect Delay Time and Crosstalk Models: II. Crosstalk-Induced Delay Time Deterioration and Worst Crosstalk Models : Semiconductors
• Generalized Interconnect Delay Time and Crosstalk Models: I. Applications of Interconnect Optimization Design : Semiconductors
• Integrated Tungsten Chemical Mechanical Polishing Process Characterization for Via Plug Interconnection in Ultralarge Scale Integrated Circuits
• Novel Technique to Form Pt-Silicided Shallow p^+n Junctions Using Low-Temperature Processes
• Effects of Vacancies on the Electrical Characteristics of Metal/GaAs Schottky Contacts "A Quantitative Model"
• Thin-Film Transistors with Polycrystalline Silicon Films Prepared by Two-Step Rapid Thermal Annealing
• Effects of O_2- and N_2O-Plasma Treatments on Properties of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide
• Enhanced Metalorganic Chemical Vapor Deposition Titanium Nitride Film Fabricated Using Tetrakis-Dimethylamino-Titanium for Barrier Metal Application in Sub-Half-Micron Technology
• Enhanced Extreme Ultraviolet Lithography Mask Inspection Contrast Using Fabry-Perot Type Antireflective Coating
• Diluted Low Dielectric Constant Materials as Bottom Antireflective Coating Layers for both KrF and ArF Lithography Processes
• Thermal Flow and Chemical Shrink Techniques for Sub-100 nm Contact Hole Fabrication in Electron Beam Lithography
• Reduction Substrate Alkaline Contamination by Utilizing Multi-Layer Bottom Antireflective Coating Structures in ArF Lithography
• Low Dielectric Constant Polymer Materials as Bottom Antirefiective Coating Layers for both KrF and ArF Lithography
• Characterizing Optical Properties of Self-Assembled Gold Nanoparticles for Surface Plasmon Resonance Device Applications
• Fabrication of Silicon and Germanium Nanostructures by Combination of Hydrogen Plasma Dry Etching and VLS Mechanism
• Low-Temperature Process to Improve the Leakage Current of (Ba, Sr)TiO_3 Films on Pt/TiN/Ti/Si Substrates
• The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO_3 Thin Films at Low Substrate Temperatures
• Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO_3/Pt Capacitors at Low Substrate Temperatures
• Effect of Temperature and Illumination on the Instability of a-Si:H Thin-Film Transistors under AC Gate Bias Stress : Semiconductors
• Turnaround Phenomenon of Threshold Voltage Shifts in Amorphous Silicon Thin Film Transistors under Negative Bias Stress
• The Instability Mechanisms of Hydrogenated Amorphous Silicon Thin Film Transistors under AC Bias Stress
• The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States
• Plasma Passivation Effects on Polycrystalline Silicon Thin-Film Transistors Utilizing Nitrous Oxide Plasma
• Growth and field emission characteristics of carbon nanotubes using Co/Cr/Al multilayer catalyst
• Characterizing Optical Properties of Self-Assembled Gold Nanoparticles for Surface Plasmon Resonance Device Applications
• Effects of Rapid Thermal Annealing on Cobalt Silicided p^+ poly-Si Gates Fabricated by BF^+_2 Implantation into Bilayered CoSi/a-Si Films
• High-Performance Superthin Oxide/Nitride/Oxide Stacked Dielectrics Formed by Low-Pressure Oxidation of Ultrathin Nitride
• High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires
• Reverse Annealing of Arsenic-Implanted Low-Pressure Chemical Vapor Deposition (LPCVD) Amorphous-Silicon Films
• High-Performance Nitrided Oxides Fabricated by Very-Low-Pressure Nitridation Technique
• Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor
• Investigation of A 450 V Rating Silicon-On-Insulator Lateral-Double-Diffused-Metal–Oxide– Semiconductor Fabrication by 12/25/5/40 V Bipolar-Complementary Metal–Oxide–Semiconductor Double-Diffused Metal–Oxide–Semiconductor Process on Bulk Silicon Substrate
• Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO3/Pt Capacitors at Low Substrate Temperatures
• Polarization Degradation and Breakdown of Pulse-Laser-Deposited (Pb,Sr)TiO3 Films at Low Temperatures
• The Reliability Improvements of Carbon Nanotubes Emitters by Utilizing an Fe–Ti Codeposited Catalyst
• High-Performance Excimer-Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors with the Pre-Patterned Recessed Channel
• Dependence of Ferroelectric Characteristics on the Deposition Temperature of (Pb,Sr)TiO3 Films
• Characterizing Trench-Gate Power Metal–Oxide–Semiconductor Field Effect Transistor with Multi-Layer Dielectrics at the Trench Bottom
• A Quasi-Planar Thin Film Field Emission Diode
• Improved Field-Emission Properties of Carbon Nanotube Field-Emission Arrays by Controlled Density Growth of Carbon Nanotubes
• Fabrication and Characterization of Carbon Nanotube Triodes
• Growth and Field Emission Characteristics of Carbon Nanotubes Using Co/Cr/Al Multilayer Catalyst
• Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization
• Fabrication and Characterization of lateral Field Emission Device Based on Carbon Nanotubes
• The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO3 Thin Films at Low Substrate Temperatures
• Performance and Reliability Trade-off of Large-Tilted-Angle Implant P-Pocket on Stacked-Gate Memory Devices

もっと見る 閉じる

スポンサーリンク