Performance and Reliability Trade-off of Large-Tilted-Angle Implant P-Pocket on Stacked-Gate Memory Devices
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-07-01
著者
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Hsu Charles
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Lin C‐j
National Taiwan Univ. Sci. And Technol. Taipei Twn
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Hsu Charles
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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Chen H‐h
Kingmax Optoelectronics Inc. Hu Kou Twn
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HONG Gary
United Microelectronics Corporation (UMC)
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Hong Garry
Central Integration Division, United Microelectronics Corporation
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Hong G
Rodel‐nitta Co. Nara Jpn
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Lin Chrong-jung
Microelectronics Laboratory Semiconductor Technology & Application Research (star) Group Departm
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Lin Chrong-jung
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Institute Of E
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SHEN Shih-Jye
Microelectronics Lab, Semiconductor Technology and Application Research(STAR)Group, Department of El
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CHEN Hsin-Ming
Microelectronics Lab, Semiconductor Technology and Application Research(STAR)Group, Department of El
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CHEN Hwi-Huang
United Microelectronics Cooperation
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Shen Shih-jye
Microelectronics Lab Semiconductor Technology And Application Research(star)group Department Of Elec
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Hong Gary
Specialty Techology Division United Microelectronics Corporation
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HSU Charles
Microelectrics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University
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Chen Hsin-Ming
Microelectronics Lab, Semiconductor Technology and Application Research (STAR) Group,
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Hong Gary
United Microelectronics Cooperation, Hsin-Chu, Taiwan, ROC
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- Performance and Reliability Trade-off of Large-Tilted-Angle Implant P-Pocket on Stacked-Gate Memory Devices