High Speed F-N Operated Volatile Memory Cell with Stacked Plasma Enhanced Chemical Vapor Deposition (PECVD) Nanocrystalline Si Layer Structure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-15
著者
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Hsu Charles
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Hsu Charles
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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Hsu Charles
Microelectronics Laboratory Semiconductor Technology & Application Research (star) Group Departm
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Lin C‐j
Chunghwa Telecom Co. Ltd. Taoyuan Twn
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Lin Chrong-jung
Microelectronics Laboratory Semiconductor Technology & Application Research (star) Group Departm
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Lin Chrong-jung
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Institute Of E
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SHEN Shih-Jye
Microelectronics Lab, Semiconductor Technology and Application Research(STAR)Group, Department of El
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Shen Shih-jye
Microelectronics Laboratory Semiconductor Technology & Application Research (star) Group Departm
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Shen Shih-jye
Microelectronics Lab Semiconductor Technology And Application Research(star)group Department Of Elec
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HSU Charles
Microelectrics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University
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