Optimization of Program Threshold Window from Understanding of Novel Fast Charge Loss in Nonvolatile Memory
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概要
- 論文の詳細を見る
This paper describes and discusses intensively the charge loss characteristics in the stacked-gate memory device with inter-poly oxide-nitride-oxide (ONO) dielectric at elevated temperatures. There exist two distinct phases in the charge loss characteristics. The dominant mechanism in the first phase can be described as the charge transport in the nitride layer. The second phase is dominated by effective thermionic emission effect from the stacked gate system. A linearly proportional relationship is also observed between normalized charge loss in the first phase and initial threshold voltage shift. Due to the fast charge loss rate, the charge loss in the first phase governs the threshold instability of the stacked-gate device. A method to determine the programming window for better threshold voltage stability based on charge loss in first phase is proposed.
- 社団法人応用物理学会の論文
- 1998-08-15
著者
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Hsu Charles
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Hsu Charles
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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LIANG Mong-Song
Taiwan Semiconductor Manufacturing Co., Ltd.
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Liang Mong-song
Taiwan Semiconductor Manufacturing Co. Ltd.
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Hsu Charles
Microelectronics Lab Semiconductor Technology And Application Research (star) Group Department Of El
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SHEN Shih-Jye
Microelectronics Lab, Semiconductor Technology and Application Research(STAR)Group, Department of El
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Shen S‐j
National Tsing‐hua Univ. Hsin‐chu Twn
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Shen Shih-jye
Microelectronics Laboratory Semiconductor Technology & Application Research(star)group Departmen
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Shen Shih-jye
Microelectronics Lab Semiconductor Technology And Application Research(star)group Department Of Elec
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HSU Charles
Microelectrics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University
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