Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited $\alpha$-SiCN:H Films with Different Hydrogen Contents

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概要

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• This work investigates the thermal stability and physical and barrier properties of two species of plasma-enhanced chemical-vapor-deposited (PECVD) amorphous silicon–nitrocarbide ($\alpha$-SiCN:H) films with different hydrogen contents and dielectric constants of less than 5. It is found that the $\alpha$-SiCN:H film with a higher hydrogen content has a lower dielectric constant. Both species of $\alpha$-SiCN:H films are thermally stable at temperatures up to 500°C. However, a degraded dielectric strength was observed for the $\alpha$-SiCN:H film with a lower $k$-value of 4, which has a much higher hydrogen content. This may be attributed to hydrogen-related defects, such as Si–H+–Si hydrogen bridges, and numerous Si–H weak bonds produced by the high hydrogen content in the $\alpha$-SiCN:H film.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-08-15

著者

• CHEN Mao-Chieh

  Department of Electronics Engineering & The Institute of Electronics, National Chiao Tung University

• Liang Mong-song

  Taiwan Semiconductor Manufacturing Co. Ltd.

• KO Chung-Chi

  Taiwan Semiconductor Manufacturing Company

• JANG Syun-Ming

  Taiwan Semiconductor Manufacturing Company

• YU Chen-Hua

  Taiwan Semiconductor Manufacturing Company

• Chiang Chiu-chih

  Department Of Electronics Engineering National Chiao-tung University

• Chen Mao-Chieh

  Department of Electronics Engineering, National Chiao-Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan

• Liang Mong-Song

  Taiwan Semiconductor Manufacturing Company, No. 9, Creation Rd. I, Science-Based Industrial Park HsinChu, Taiwan

• Chiang Chiu-Chih

  Department of Electronics Engineering, National Chiao-Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan

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