Formation and Characterization of NiSi-Silicided n+p Shallow Junctions
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概要
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NiSi-silicided n+p shallow junctions are fabricated by P+/F+ dual implantation into/through a thin NiSi silicide layer followed by low-temperature furnace annealing. The incorporation of fluorine atoms in the 61-nm-thick NiSi film retards film agglomeration, making the film stable up to 750 °C for 90 min. A forward ideality factor of 1.08 and a reverse bias current density (at 5 V) of 0.7 nA/cm2 can be attained for the NiSi (61 nm)/n+p junctions with an area of $580\times 580$ μm2 fabricated by P+/F+ dual implantation at 35/30 keV to a dose of $5\times 10^{15}/5\times 10^{15}$ cm-2 followed by 750 °C thermal annealing. The junction formed is about 71 nm from the NiSi/Si interface. Activation energy measurement shows that the reverse bias area current of the NiSi/n+p junctions is dominated by the diffusion current, while their reverse bias peripheral current is dominated by the minority generation current at room temperature. This implies the presence of generation centers in and/or close to the junction region along the perimeter.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-03-15
著者
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CHEN Mao-Chieh
Department of Electronics Engineering & The Institute of Electronics, National Chiao Tung University
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Wang Chao-chun
Department Of Electronics Engineering National Chiao-tung University
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