Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-05-15
著者
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Liang M‐s
Taiwan Semiconductor Manufacturing Co. Hsinchu Twn
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Lin Cheng-tang
R&d Department Taiwan Semiconductor Manufacturing Company Science-based Industrial Park
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CHEN Mao-Chieh
Department of Electronics Engineering & The Institute of Electronics, National Chiao Tung University
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Liang Mong-song
Taiwan Semiconductor Manufacturing Company
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HSU Wei-Cheng
Department of Electronics Engineering, National Chiao Tung University
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LIANG Mong-Song
R&D Department, Taiwan Semiconductor Manufacturing Company, Science-Based Industrial Park
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LIN Cheng-Tang
R&D Department, Taiwan Semiconductor Manufacturing Company, Science-Based Industrial Park
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Hsu Wei-cheng
Materials Research Laboratory
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Liang Mong-song
R&d Department Taiwan Semiconductor Manufacturing Company Science-based Industrial Park
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Hsu Wei-cheng
Department Of Electronics Engineering National Chiao Tung University
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