Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition $\alpha$-SiC:N:H Films

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概要

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• In this work, we investigate the thermal stability and physical and barrier properties of three species of plasma enhanced chemical vapor deposition (PECVD) $\alpha$-SiC:N:H silicon carbide films with different carbon and nitrogen contents and dielectric constants less than a value of 5.5. For comparison, one species of $\alpha$-SiN:H film with a $k$ value of 7.2 is also studied. It is found that the dielectric constant decreases with increasing content of carbon and decreasing content of nitrogen in the $\alpha$-SiC:N:H film. All of the three species of $\alpha$-SiC:N:H and the one species of $\alpha$-SiN:H films are thermally stable at temperatures up to 500°C. However, degraded barrier capability and moisture resistance were observed for the $\alpha$-SiC:N:H film with a $k$ value of 3.5, which has a C/Si atomic ratio of 0.875. This is presumably due to the poorly crosslinked molecular structure and porosity enhancement caused by the abundant amount of carbon in the $\alpha$-SiC:N:H film.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-07-15

著者

• CHEN Mao-Chieh

  Department of Electronics Engineering & The Institute of Electronics, National Chiao Tung University

• Liang Mong-song

  Taiwan Semiconductor Manufacturing Co. Ltd.

• KO Chung-Chi

  Taiwan Semiconductor Manufacturing Company

• CHEN Hsi-Ping

  Taiwan Semiconductor Manufacturing Company

• JANG Syun-Ming

  Taiwan Semiconductor Manufacturing Company

• YU Chen-Hua

  Taiwan Semiconductor Manufacturing Company

• Chiang Chiu-chih

  Department Of Electronics Engineering National Chiao-tung University

• Wu Wei-hao

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University

• Ko Chung-Chi

  Taiwan Semiconductor Manufacturing Company, No. 9, Creation Rd. I, Science-Based Industrial Park HsinChu, Taiwan

• Yu Chen-Hua

  Taiwan Semiconductor Manufacturing Company, No. 9, Creation Rd. I, Science-Based Industrial Park HsinChu, Taiwan

• Chen Hsi-Ping

  Taiwan Semiconductor Manufacturing Company, No. 9, Creation Rd. I, Science-Based Industrial Park HsinChu, Taiwan

• Wu Wei-Hao

  Department of Electronics Engineering, National Chiao-Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan

• Wu Zhen-Cheng

  Department of Dielectric and CMP, Advanced Module Technology Division, Taiwan Semiconductor Manufacturing Company, Science-Based Industrial Park, Hsinchu 300, Taiwan

• Wu Zhen-Cheng

  Department of Electronics Engineering, National Chiao-Tung University, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan

• Jang Syun-Ming

  Taiwan Semiconductor Manufacturing Company, No. 9, Creation Rd. I, Science-Based Industrial Park HsinChu, Taiwan

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