Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-08-01

著者

• FANG Yean-Kuen

  VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, Nat

• Chen C‐w

  Industrial Technol. Res. Inst. Hsinchu Twn

• Fang Y‐k

  National Cheng Kung Univ. Taina Twn

• Fang Yean-kuen

  Vlsi Technology Laboratory Electrical Engineering National Cheng Kung University

• Fang Yean-kuen

  Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng Kuang University

• Fang Yean-kuen

  Vlsi Technology Lab. Institute Of Microelectronics Ee Department National Cheng Kung University No.

• LIANG Mong-Song

  Taiwan Semiconductor Manufacturing Co., Ltd.

• Liang Mong-song

  R&d Department Taiwan Semiconductor Manufacturing Company

• Liang Mong-song

  Taiwan Semiconductor Manufacturing Co. Ltd.

• CHEN Chii-Wen

  VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng-Kung University

• HSIEH Jang-Cheng

  Taiwan Memory Technology Inc.

• LIN Mou-Shiung

  Taiwan Semiconductor Manufacture Company

• Lin M‐s

  Taiwan Semiconductor Manufacturing Company

• LEE Gun-Yuan

  VLSI Technology Laboratory, Department of Electrical Engineering, National Cheng-Kung University

• YOO Chue-San

  Taiwan Semiconductor Manufacturing Co. Ltd.

• Lee Gun-yuan

  Vlsi Technology Laboratory Department Of Electrical Engineering National Cheng-kung University

• Hsieh Jang-cheng

  Taiwan Semiconductor Manufacturing Company Ltd. Science-based Industrial Park

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