Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC : N : H Films

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Formation of Bilayer Shallow MoSi_2/CoSi_2 Salicide Contact Using W/Co-Mo Alloy Metallization
A New Method to Correct Capacitance of High-leakage Ultra-thin Gate Dielectric
Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
Threshold Voltage Instability in nMOSFETs with HfSiO/SiO_2 High-k Gate Stacks
Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC : N : H Films
Effects of O_2- and N_2-Plasma Treatments on Copper Surface
Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiC : H Films from Trimethylsilane and Tetramethylsilane
Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
A Comparison of Behaviors between Hydrogenated/Unhydrogenated Polysilicon Thin Film Transistors under Electric Stress
Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric
Degradation of Flash Memory Using Drain-Avalanche Hot Electron (DAHE) Self-Convergence Operation Scheme
Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiCN:H Films with Different Hydrogen Contents
Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure
An Efficient Improvement for Barrier Effect of W-filled Contact
An Efficient Improvement for Barrier Effect of W-Filled Contact
Reactively Sputtered Amorphous TaSi_xN_y Films Serving as Barrier Layer Against Copper Diffusion
Effects of Tungsten Polycide Process and Post-Polyoxidation Rapid Thermal Process on Electrical Characteristics of Thin Polysilicon Oxide
Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology
A Unified Functional Reliability Model for N-channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub 2 nm Gate Oxide
New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides
Monte Carlo Sphere Model for Effective Oxide Thinning Induced Extrinsic Breakdown
Monte-Carlo Sphere Model for "Effective Oxide Thinning" Induced Extrinsic Breakdown
Chemically Vapor Deposited Cu Films on Ar-Plasma-Treated TiN Substrate(Surfaces, Interfaces, and Films)
Optimization of Program Threshold Window from Understanding of Novel Fast Charge Loss in Nonvolatile Memory
Effects of N_2O Plasma Treatment on the Performance of Excimer-Laser-Annealed Polycrystalline Silicon Thin Film Transistors
Copper Chemical Vapor Deposition Films Deposited from Cu(1, 1, 1, 5, 5, 5-hexafluoroacetylacetonate) vinyltrimethylsilane
Low-Temperature-Processed Polycrystalline silicon thin-film transistors Using a New Two-Step Crystallization Technique
Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
Effects of Base Oxide Thickness and Silicon Composition on Charge Trapping in HfSiO/SiO2 High-$k$ Gate Stacks
Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited $\alpha$-SiC:H Films from Trimethylsilane and Tetramethylsilane
Effect of TiN Substrate Plasma Treatment on Copper Chemical Vapor Deposition
Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited $\alpha$-SiCN:H Films with Different Hydrogen Contents
Thermal Stability of Cu/NiSi-Contacted p+n Shallow Junction
An Efficient Improvement for Barrier Effect of W-filled Contact
Effects of O2- and N2-Plasma Treatments on Copper Surface
Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition $\alpha$-SiC:N:H Films
Formation of NiSi-Silicided p+n Shallow Junctions by BF2+ Implantation into/through Silicide and Rapid Thermal Annealing
Formation and Characterization of NiSi-Silicided n+p Shallow Junctions

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