Effects of O_2- and N_2-Plasma Treatments on Copper Surface

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-11-15

著者

• Wu Zhen-cheng

  Taiwan Semiconductor Manufacturing Company

• Liang M‐s

  Taiwan Semiconductor Manufacturing Co. Hsinchu Twn

• CHEN Mao-Chieh

  Department of Electronics Engineering & The Institute of Electronics, National Chiao Tung University

• Liang Mong-song

  Taiwan Semiconductor Manufacturing Company

• CHIANG Chiu-Chih

  Department of Electronics Engineering, National Chiao-Tung University

• WU Zhen-Cheng

  Department of Electronics Engineering, National Chiao-Tung University

• LI Lain-Jong

  Department of Dielectric and CMP, Advanced Module Technology Division, Taiwan Semiconductor Manufact

• JANG Syun-Ming

  Department of Dielectric and CMP, Advanced Module Technology Division, Taiwan Semiconductor Manufact

• LIANG Mong-Song

  Department of Dielectric and CMP, Advanced Module Technology Division, Taiwan Semiconductor Manufact

• Chiang Chiu-chih

  Department Of Electronics Engineering National Chiao-tung University

関連論文

• Formation of Bilayer Shallow MoSi_2/CoSi_2 Salicide Contact Using W/Co-Mo Alloy Metallization
• Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
• Threshold Voltage Instability in nMOSFETs with HfSiO/SiO_2 High-k Gate Stacks
• Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC : N : H Films
• Effects of O_2- and N_2-Plasma Treatments on Copper Surface
• Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiC : H Films from Trimethylsilane and Tetramethylsilane
• Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
• Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiCN:H Films with Different Hydrogen Contents
• Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure
• An Efficient Improvement for Barrier Effect of W-filled Contact
• An Efficient Improvement for Barrier Effect of W-Filled Contact
• Reactively Sputtered Amorphous TaSi_xN_y Films Serving as Barrier Layer Against Copper Diffusion
• A Unified Functional Reliability Model for N-channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub 2 nm Gate Oxide
• New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides
• Monte Carlo Sphere Model for Effective Oxide Thinning Induced Extrinsic Breakdown
• Monte-Carlo Sphere Model for "Effective Oxide Thinning" Induced Extrinsic Breakdown
• Chemically Vapor Deposited Cu Films on Ar-Plasma-Treated TiN Substrate(Surfaces, Interfaces, and Films)
• Bulk Crystallization Behavior of Poly(ε-caprolactone) with a Wide Range of Molecular Weight
• Effects of N_2O Plasma Treatment on the Performance of Excimer-Laser-Annealed Polycrystalline Silicon Thin Film Transistors
• Copper Chemical Vapor Deposition Films Deposited from Cu(1, 1, 1, 5, 5, 5-hexafluoroacetylacetonate) vinyltrimethylsilane
• Low-Temperature-Processed Polycrystalline silicon thin-film transistors Using a New Two-Step Crystallization Technique
• Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
• Effects of Base Oxide Thickness and Silicon Composition on Charge Trapping in HfSiO/SiO2 High-$k$ Gate Stacks
• Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited $\alpha$-SiC:H Films from Trimethylsilane and Tetramethylsilane
• Effect of TiN Substrate Plasma Treatment on Copper Chemical Vapor Deposition
• Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited $\alpha$-SiCN:H Films with Different Hydrogen Contents
• Thermal Stability of Cu/NiSi-Contacted p+n Shallow Junction
• An Efficient Improvement for Barrier Effect of W-filled Contact
• Effects of O2- and N2-Plasma Treatments on Copper Surface
• Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition $\alpha$-SiC:N:H Films
• Formation of NiSi-Silicided p+n Shallow Junctions by BF2+ Implantation into/through Silicide and Rapid Thermal Annealing
• Formation and Characterization of NiSi-Silicided n+p Shallow Junctions

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