New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-01
著者
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Hsu Charles
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Liang M‐s
Taiwan Semiconductor Manufacturing Co. Hsinchu Twn
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King Ya-chin
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Lee Hai-ming
Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
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LIANG Mong-Song
Taiwan Semiconductor Manufacturing Co., Ltd.
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Hsu Chih-wei
Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
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LIU Cheng-Jye
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department
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