Hsu Chih-wei | Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
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概要
- 同名の論文著者
- Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Ofの論文著者
関連著者
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King Ya-chin
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Lee Hai-ming
Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Hsu Chih-wei
Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
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LIU Cheng-Jye
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department
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Hsu Charles
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Liang M‐s
Taiwan Semiconductor Manufacturing Co. Hsinchu Twn
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LIANG Mong-Song
Taiwan Semiconductor Manufacturing Co., Ltd.
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Liang Mong-song
Taiwan Semiconductor Manufacturing Co. Ltd.
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Liang Mong-Song
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, Taiwan, R.O.C.
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HSU Charles
Microelectrics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University
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Hsu Charles
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan, R.O.C.
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Hsu Chih-Wei
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan, R.O.C.
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Lee Hai-Ming
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan, R.O.C.
著作論文
- New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides
- New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides