HSU Charles | Microelectrics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University

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概要

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著作論文

A Body Effect Assisted NOR-Type (BeNOR) Multilevel Flash Memory
Comprehensive Study of a New Self-Convergent Programming Scheme for Split Gate Flash Memory
A New Bit-Line-Controlled Self-Convergent Multilevel AND-Type Flash Memory
Comprehensive Study of a New Self-Convergent Programming Scheme for Split Gate Flash Memory
A New Bit-Line-Controlled Self-Convergent Multi-Level And-Type Flash Memory
New Self-Convergent Programming Method for Multilevel AND Flash Memory
New Self-Convergent Programming Method for Multi-Level AND Flash Memory
Performance and Reliability Trade-off of Large-Tilted-Angle Implant P-Pocket on Stacked-Gate Memory Devices
A New Ultra Low Voltage Silicon-Rich-Oxide (SRO) NAND Cell
Self-Convergent Programming Scheme for Multilevel P-Channel Flash Memory
High Speed F-N Operated Volatile Memory Cell with Stacked Plasma Enhanced Chemical Vapor Deposition (PECVD) Nanocrystalline Si Layer Structure
A Novel High-Density and High-Speed NAND-Type Electrical Erasable Programmable Read Only Memory
A Novel High-Density and High-Speed NAND-Type EEPROM
A Unified Functional Reliability Model for N-channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub 2 nm Gate Oxide
Optimization of Program Threshold Window from Understanding of Novel Fast Charge Loss in Nonvolatile Memory
New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides
A Body-Effect-Assisted NOR-type (BeNOR) Multilevel Flash Memory
A Novel High-Density and High-Speed NAND-Type Electrical Erasable Programmable Read Only Memory
Performance and Reliability Trade-off of Large-Tilted-Angle Implant P-Pocket on Stacked-Gate Memory Devices

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