New Self-Convergent Programming Method for Multilevel AND Flash Memory
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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Hsu Charles
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Yang Evans
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Wong Wei-jer
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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Hsu Charles
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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WANG Yen-Sen
Microelectrics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of
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SHEN Rick
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department
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Wang Yen-sen
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Wong Web-jer
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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Wang Y‐s
Microelectronics Laboratory Semiconductor Technology And Applicaiton Research (star) Group Departmen
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Wang Yen-sen
Microelectronics Laboratory Semiconductor Technology & Application Research(star)group Departmen
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Shen Rick
Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Yang Evans
Microelectronic Laboratory Semiconductor Technology Application Research(star)group Department Of El
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YANG Evans
Microelectrics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University
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HSU Charles
Microelectrics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University
関連論文
- A Body Effect Assisted NOR-Type (BeNOR) Multilevel Flash Memory
- Comprehensive Study of a New Self-Convergent Programming Scheme for Split Gate Flash Memory
- A New Bit-Line-Controlled Self-Convergent Multilevel AND-Type Flash Memory
- Comprehensive Study of a New Self-Convergent Programming Scheme for Split Gate Flash Memory
- A New Bit-Line-Controlled Self-Convergent Multi-Level And-Type Flash Memory
- New Self-Convergent Programming Method for Multilevel AND Flash Memory
- New Self-Convergent Programming Method for Multi-Level AND Flash Memory
- Degradation of Flash Memory Using Drain-Avalanche Hot Electron (DAHE) Self-Convergence Operation Scheme
- A Body-Effect-Assisted NOR-type (BeNOR) Multilevel Flash Memory
- Performance and Reliability Trade-off of Large-Tilted-Angle Implant P-Pocket on Stacked-Gate Memory Devices
- A New Ultra Low Voltage Silicon-Rich-Oxide (SRO) NAND Cell
- Self-Convergent Programming Scheme for Multilevel P-Channel Flash Memory
- High Speed F-N Operated Volatile Memory Cell with Stacked Plasma Enhanced Chemical Vapor Deposition (PECVD) Nanocrystalline Si Layer Structure
- A Novel High-Density and High-Speed NAND-Type Electrical Erasable Programmable Read Only Memory
- A Novel High-Density and High-Speed NAND-Type EEPROM
- A Unified Functional Reliability Model for N-channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub 2 nm Gate Oxide
- New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides
- Optimization of Program Threshold Window from Understanding of Novel Fast Charge Loss in Nonvolatile Memory
- New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides
- A Body-Effect-Assisted NOR-type (BeNOR) Multilevel Flash Memory
- A Novel High-Density and High-Speed NAND-Type Electrical Erasable Programmable Read Only Memory
- Performance and Reliability Trade-off of Large-Tilted-Angle Implant P-Pocket on Stacked-Gate Memory Devices