New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides
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概要
- 論文の詳細を見る
A new trap-assisted band-to-band tunneling (TAB) gate current model is proposed to describe the new observed band-to-band tunneling (BBT) induced gate current characteristics of p-channel metal-oxide-semiconductor field effect transistors (PMOSFET's) with ultra-thin gate oxide. Based on this new TAB gate current model, the off-state gate currents of PMOSFET's with various sub-3 nm gate oxides can be well characterized, while the conventional BBT current model is no longer applicable in this regime.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-15
著者
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King Ya-chin
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Lee Hai-ming
Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Liang Mong-song
Taiwan Semiconductor Manufacturing Co. Ltd.
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Hsu Chih-wei
Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
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LIU Cheng-Jye
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department
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Liang Mong-Song
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, Taiwan, R.O.C.
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HSU Charles
Microelectrics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University
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Hsu Charles
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan, R.O.C.
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Hsu Chih-Wei
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan, R.O.C.
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Lee Hai-Ming
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan, R.O.C.
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