A New Sampling Scheme for High-Sensitivity, Extended-Dynamic-Range Complementary Metal Oxide Semiconductor (CMOS) Imaging Pixel Sensors
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概要
- 論文の詳細を見る
A new sampling scheme for extending the dynamic range of a high-sensitivity complementary metal oxide semiconductor (CMOS) image sensor is proposed. The photodiode-type CMOS pixel imager, consisting of a transfer gate transistor for transporting photoelectrons from a sensing region to a readout region, is highly sensitive but suffers form a poor dynamic range. The new sampling scheme and a ratiometric processing circuit can improve the dynamic range of the pixel imager by about 24 dB by making use of the photo response of the readout node. Optimization of the sensing region area/readout region area can be applied to specific applications such as low-light imaging and high-speed imaging applications. Experimental results indicate that this pixel can maintain high sensitivity at low illumination while obtaining an extended dynamic range about 10 dB higher than that of the conventional 3-transistor (3-T) photodiode-type CMOS pixel imager.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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King Ya-chin
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Lai Cheng-hsiao
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Li Sing-rong
Microelectronics Laboratory Semiconductor Technology Application Research (star) Group Department Of
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King Ya-Chin
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electronics Engineering, National Tsing Hua University, Hsin-Chu 300, Taiwan, R.O.C.
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Li Sing-Rong
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electronics Engineering, National Tsing Hua University, Hsin-Chu 300, Taiwan, R.O.C.
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