A Logarithmic Response Complementary Metal Oxide Semiconductor Image Sensor with Parasitic P–N–P Bipolar Junction Transistor
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概要
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Logarithmic-response complementary metal oxide semiconductor (CMOS) active pixel sensors provide a desirable attribute of wide dynamic range even with low supply voltages. In this paper, a log-mode pixel with employing parasitic P–N–P bipolar junction transistor (BJT) to amplify photo-current is investigated and optimized. A new log-mode cell with a calibration transistor is proposed to increase the output voltage swing as well as to reduce the fixed pattern noise. The measurement results demonstrate that, the output voltage swing of this new cell is enhanced by $4\times$ and fixed pattern noise (FPN) of a pixel array can be reduced by $10\times$ comparing to that of a conventional log-mode CMOS active pixel sensor.
- 2006-04-30
著者
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King Ya-chin
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Lai Liang-wei
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Lai Cheng-hsiao
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Chiang Wen-jen
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Institute Of E
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Chiang Wen-Jen
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan, R.O.C.
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Lai Liang-Wei
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan, R.O.C.
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Lai Cheng-Hsiao
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan, R.O.C.
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King Ya-Chin
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan, R.O.C.
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