Multilevel Antifuse Cells with Programmable Contact in Pure 90 nm Logic Process
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概要
- 論文の詳細を見る
A multilevel oxide antifuse cell with programmable contact, fully compatible with a standard complementary metal–oxide–semiconductor (CMOS) logic process, is firstly presented for logic nonvolatile memory applications. A four-state antifuse cell has a stable read window and a very small cell size of 0.097 μm2/bit. By adopting the multiple stages in oxide breakdown, four states of read current level have been successfully demonstrated on this cell fabricated by a standard 90 nm CMOS logic process. A fast programming speed of 10 μs can be obtained using a low programming voltage of less than 4 V. With excellent technology scalability and adaptability, this multilevel antifuse cell provides a very promising solution for programmable logic beyond a 90 nm technology node.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-01-25
著者
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King Ya-chin
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Kuo Cheng-Hsiung
Design Technology Division, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan, R.O.C.
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Huang Chia-En
Microelectronics Lab., STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
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Tseng Yuan
Microelectronics Lab., STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
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Chih Yu-De
Design Technology Division, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan, R.O.C.
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Lin Chrong
Microelectronics Lab., STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
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King Ya-Chin
Microelectronics Lab., STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
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