Source Side Injection Programmed P-Channel Self-Aligned-Nitride One-Time Programming Cell for 90 nm Logic Nonvolatile Memory Applications
スポンサーリンク
概要
- 論文の詳細を見る
This study demonstrates a logic compatible p-channel self-aligned-nitride (SAN) cell for one-time programming (OTP) memory applications. The SAN storage structure is independent of the gate oxide thickness, allowing these cells to be performed in a pure advanced logic process beyond 90 nm. The study also exams the characteristics of the source-side injection hot electron (SSIHE) scheme using the simulation tools, and successfully verified the programming characteristics of the p-channel SAN cell with different program voltages. Moreover, this study shows the proposed SAN cell has a wide read current window, high reliability, and superior immunity to disturbance. Combined with a source-side injection scheme, this cell provides a promising solution for advanced logic nonvolatile memory (NVM) applications.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-04-25
著者
-
Ya-Chin King
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
-
Huang Chia-En
Microelectronics Lab., STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
-
Chrong-Jung Lin
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
-
Chrong-Jung Lin
Microelectronics Laboratory, STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
-
Chia-En Huang
Microelectronics Laboratory, STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
-
Chen Ying-Je
Microelectronics Laboratory, STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
-
OuYang Hsun
Microelectronics Laboratory, STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
-
Hsun OuYang
Microelectronics Laboratory, STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
-
Ying-Je Chen
Microelectronics Laboratory, STAR Group, Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
関連論文
- Multilevel Antifuse Cells with Programmable Contact in Pure 90 nm Logic Process
- Source Side Injection Programmed P-Channel Self-Aligned-Nitride One-Time Programming Cell for 90 nm Logic Nonvolatile Memory Applications
- Lateral Back-to-Back Diode for Low-Capacitance Transient Voltage Suppressor