A New Well Capacity Adjusting Scheme for High Sensitivity, Extended Dynamic Range CMOS Imaging Pixel Sensors
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概要
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An embedded 3T active-pixel complementary metal oxide semiconductor (CMOS) image sensor, fabricated with a standard 0.25-μm CMOS logic process with new well capacity adjusting scheme is proposed to extend dynamic range. The photo-sensing device consists of a photo-gate area and a photo-diode, and the well capacity is adjusted by controlling the pulse voltage on the photo-gate. Besides, the imaging sensitivity can be improved through optimizing the photo-gate to photo-diode area ratio and the pulse high level of photo-gate voltage. The experimental results demonstrate that the pixel can achieve both high sensitivity at low illumination and extended dynamic range of 25 dB under high illumination.
- 2005-04-15
著者
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King Ya-chin
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Yu Yueh-ping
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Lai Cheng-hsiao
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Yu Yueh-Ping
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan, ROC
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