Reliability and Memory Characteristics of Sequential Laterally Solidified Low Temperature Polycrystalline Silicon Thin Film Transistors with an Oxide–Nitride–Oxide Stack Gate Dielectric
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概要
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In this work, low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) with sequential lateral solidification (SLS) laser annealing process were fabricated. The grain boundaries (GB) can be well-controlled to avoid the channel area, so that the device mobility is created enhanced. The device performance and reliability between oxide–nitride–oxide (ONO) stacked gate dielectric devices and conventional SiO2 devices have been measured and analyzed under AC stress conditions. These results indicate that LTPS TFTs with ONO structure exhibit better reliability characteristics than conventional ones. A TFT metal–oxide–nitride–oxide–silicon (MONOS) memory device is also investigated. This MONOS device is a promising embedded non-volatile memory candidate to reduce power consumption for mobile applications.
- 2006-04-30
著者
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Chen Yu-cheng
Electronics Research And Service Organization Industrial Technology Research Institute
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King Ya-chin
Microelectronic Laboratory Semiconductor Technology Application Research (star) Group Department Of
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Chen Hung-tse
Electronics Research And Service Organization Industrial Technology Research Institute
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CHEN Chi-Lin
Electronics Research and Service Organization Industrial Technology Research Institute
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LIN Jia-Xing
Electronics Research and Service Organization Industrial Technology Research Institute
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Lin Jia-Xing
Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 30013, Taiwan, R.O.C.
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Hsieh Szu-I
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electronics Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan, R.O.C.
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King Ya-Chin
Microelectronics Laboratory, Semiconductor Technology Application Research (STAR) Group, Department of Electronics Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan, R.O.C.
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Chen Yu-Cheng
Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 30013, Taiwan, R.O.C.
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Chen Chi-Lin
Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 30013, Taiwan, R.O.C.
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