Rapid and Efficient Recrystallization and Activation of Implanted Phosphorus Doping in Laser-Annealed Polysilicon by Rapid Energy Transfer Annealing
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概要
- 論文の詳細を見る
Phosphorus atoms that are implanted as dopants in laser-annealed polysilicon films are recrystallized and activated by rapid energy transfer annealing (RETA). After five pulses of RETA annealing, with a total process time of 90 s, the implanted, damaged amorphous silicon films are fully recrystallized into polysilicon films. Transmission electron microscopic images clearly reveal that these amorphous regions fully recover the original grain structure and the surface topography of the polysilicon film preceding implantation. The current versus voltage ($I$-$V$) measurements demonstrate that the implanted phosphorus atoms are efficiently activated. The sheet resistance of the annealed film after annealing is approximately 280 $\Omega$/square, which is around the same order as obtained for excimer laser-annealed films.
- Japan Society of Applied Physicsの論文
- 2003-12-15
著者
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Jiang Yeu-long
Department Of Electrical Engineering National Chung Hsing University
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CHEN Chi-Lin
Electronics Research and Service Organization Industrial Technology Research Institute
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Lin Chiung-wei
Institute Of Electro-optical Engineering Tatung University
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Lin Chiung-Wei
Institute of Electro-Optical Engineering, Tatung University, Taipei 104, Taiwan, Republic of China
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Huang Shun-Fa
Electronics Research and Service Organization, Industrial Technology Research Institute, Chutung, Hsin-Chu 310, Taiwan, Republic of China
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Jiang Yeu-Long
Department of Electrical Engineering, National Chung Hsing University, Taichung 402, Taiwan, Republic of China
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Chen Chi-Lin
Electronics Research and Service Organization, Industrial Technology Research Institute, Chutung, Hsin-Chu 310, Taiwan, Republic of China
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