Very Low Temperature Deposition of Polycrystalline Si Films Fabricated by Hydrogen Dilution with Electron Cyclotron Resonance Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Hwang H‐l
Tsing‐hua Univ. Hsin‐chu Twn
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Hwang Heuy-liang
Department Of Electrical Engineering Tsing-hua University
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HWANG Huey-Liang
Department of Electrical Engineering, Tsing-Hua University
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Wang Kun-Chih
Department of Electrical Engineering, National Tsing-Hua University
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Cheng Kuan-Lun
Department of Electronics Engineering, National Chiao-Tung University
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Jiang Yeu-Long
Department of Electrical Engineering, National Chung-Hsing University
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Yew Tri-Rung
Materials Science Center, National Tsing-Hua University
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Wang Kun-chih
Department Of Electrical Engineering National Tsing-hua University
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Yew T‐r
National Tsing‐hua Univ. Hsinchu Twn
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Cheng Kuan-lun
Department Of Electronics Engineering National Chiao-tung University
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Jiang Y‐l
National Chung Hsing Univ. Taichung Twn
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Jiang Yeu-long
Department Of Electrical Engineering National Chung Hsing University
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Hwang Huey-liang
Department Of Electrical And Power Engineering National Tsing Hua University
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Yew Tri-rung
Materials Science Center National Tsing-hua University
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Cheng Kuan-lun
Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University
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- A Novel Thin Gate-Oxide-Thickness Measurement Method by LDD (Lightly-Doped-Drain)-NMOS (N-Channel Metal-Oxide-Semiconductor) Transistors
- Very Low Temperature Deposition of Polycrystalline Si Films Fabricated by Hydrogen Dilution with Electron Cyclotron Resonance Chemical Vapor Deposition
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