The Method to Optimize Gate Oxide Integrity, Hot Carrier Effect and Electro-Static Discharge without Sacrificing the Performance in Sub-Quarter Micron Dual Gate Oxide Process
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-11-15
著者
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Hwang Heuy-liang
Department Of Electrical Engineering Tsing-hua University
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SHIH Jiaw-Ren
Taiwan Semiconductor Manufacturing Company, Reliability Assurance Department
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LEE Jian-Hsing
Taiwan Semiconductor Manufacturing Company, R&D Device Department
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WU Yi-Hsun
Taiwan Semiconductor Manufacturing Company, R&D Device Department
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LIEW Boon-Khim
Taiwan Semiconductor Manufacturing Company, R&D Device Department
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HWANG Huey-Liang
Department of Electrical Engineering, Tsing-Hua University
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CHEN Shui-Hung
Taiwan Semiconductor Manufacturing Company, R&D Device
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DIAZ Carlos-H
Taiwan Semiconductor Manufacturing Company, R&D Device
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Lee Joo-hyoung
Memory R&d Division Hynix Semiconductor Co.
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Wu Yi-hsun
Taiwan Semiconductor Manufacturing Company R&d Device Department
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Diaz Carlos-h
Taiwan Semiconductor Manufacturing Company R&d Device
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Liew Boon-khim
Taiwan Semiconductor Manufacturing Company R&d Device Department
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Liew B‐k
Taiwan Semiconductor Manufacturuing Company
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Chen Shui-hung
Taiwan Semiconductor Manufacturing Company R&d Device
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Lee J‐h
Wonkwang Univ. Chonpuk Kor
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Hwang Huey-liang
Department Of Electrical And Power Engineering National Tsing Hua University
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Shin Jiaw-Ren
Taiwan Semiconductor Manufacturing Company, Reliability Assurance Department
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WU Yi-Hsun
Taiwan Semiconductor Manufacturing Company, R&D Device
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SHIH Jiaw-Ren
Taiwan Semiconductor Manufacturing Company, R&D Device
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LEE Jian-Hsing
Taiwan Semiconductor Manufacturing Company, R & D No.9, Creation Rd. I Science Based Industrial Park
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LEE Jian-Hsing
Taiwan Semiconductor Manufacturing Company, R&D Device
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CHEN Shui-Hung
Taiwan Semiconductor Manufacturing Company, R&D Device
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DIAZ Carlos-H
Taiwan Semiconductor Manufacturing Company, R&D Device
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