Low Noise Characteristics of 0.2μm Al_<0.24>Ga_<0.76>As/In_<0.15>Ga_<0.85>As/GaAs Pseudomorphic HEMTs with Wide Head T-Shaped Multifinger Gate
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Lee Joo-hyoung
Memory R&d Division Hynix Semiconductor Co.
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Park Chul-soon
Compound Semiconductor Department Micro-electronics Technology Laboratory Electronics And Telecommun
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Lee J‐h
Lg Electronics Inst. Technol. Seoul Kor
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Pyun Kwang-eui
Compound Semiconductor Research Department Semiconductor Technology Division Electronics And Telecom
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Lee J‐h
Wonkwang Univ. Chonpuk Kor
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Park Hyung-Moo
Semiconductor Div., Electronics and Telecommunications Research Institute
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Park Hyung-moo
Semiconductor Div. Electronics And Telecommunications Research Institute
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Park Hyung-moo
Semiconductor Division Electronics And Telecommunications Research Institute
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Park C‐s
Electronics And Telecommunications Res. Inst. Taejeon Kor
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YOON Hyung-Sup
Microwave Devices Team, ETRI
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YOON Hyung-Sup
Semiconductor Division, Electronics and Telecommunications Research Institute
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LEE Jin-Hee
Semiconductor Division, Electronics and Telecommunications Research Institute
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PARK Chul-Soon
Semiconductor Division, Electronics and Telecommunications Research Institute
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PYUN Kwang-Eui
Semiconductor Division, Electronics and Telecommunications Research Institute
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Lee Ju-Hyeon
School of Electrical Engineering, Wonkwang University
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