Investigation of Low-Frequency Noise Behavior of In_<0.52>Al_<0.48>As/In_<0.60>Ga_<0.40>As Metamorphic High Electron Mobility Transistors

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• Lee K

  Etri Taejon Kor

• Lee Ki

  Samsung Electronics Co. Semiconductor R & D Center Memory Process Development Team

• Song Jong-in

  Department Of Information And Communications K-jist

• Song Jong-in

  Dept.of Information And Communications K-jist

• Lee J‐h

  Division Of Materials Science And Engineering Korea University

• Lee K

  Semiconductor R&d Center Samsung Electronics Co. Ltd

• Kim Jeong

  Dept.of Obstetrics & Gynecology, Catholic University Medical College

• Lee Kyung

  Microwave Devices Team Etri

• Lee Jin-ho

  Microwave Devices Team Etri

• YOON Hyung-Sup

  Microwave Devices Team, ETRI

• LEE Jin-Hee

  Microwave Devices Team, ETRI

• Kim Jeong

  Dept. Of Arch. Eng'g Kyung Hee University

• Lee Jin-hee

  Microwave Devices Team Etri

• Yoon Hyung-sup

  Microwave Devices Team Etri

• Kim Jeong

  Department Of Electronic Communication Engineering In Shinheung College

• Lee Jin-hee

  School Of Electrical Engineering Seoul National University

• Song Jong-in

  Dept. Of Information And Communications Gist

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