Effects of Bi Content on Electrical Properties of Pt/SrBi_2Nb_2O_9/Si Ferroelectric Gate Structure

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概要

• 論文の詳細を見る

• We have investigated effects of Bi content on electrical properties of SrBi_2Nb_2O_9(SBN) thin films. The SBN films were deposited with co-sputtering method in situ on p-type Si (100) substrates. In order to control the Bi/Sr content ratio, we used SrNb_2O_6 and Bi_2O_3 targets with different powers of RF magnetrons. We have found that electrical properties are strongly sensitive to the Bi content. The memory window gradually increased with increasing the Bi/Sr ratio in the SBN thin films, but when the Bi/Sr ratio was over 3.1 the electrical properties such as memory window and breakdown voltage were degraded. The memory window of the Pt/SBN/Si ferroelectric gate structure with the Bi/Sr ratio of 3.1 was 1.8 V ar applied voltage of 3V. And the leakage current density was 4.74×10^<-8> A/cm^2 at applied voltage of 3V.

• 社団法人電子情報通信学会の論文
• 2001-06-29

著者

• Kim Yong

  Semiconductor Materials and Devices Lab, Korea Institute of Science and Technology

• Kim S

  Semiconductor Materials And Devices Laboratory Korea Institute Of Science And Technology

• Kim Seong-il

  Semiconductor Devices Laboratory Korea Institute Of Science And Technology

• Kim Seong-ii

  Semiconductor Materials Research Center Korea Institute Of Science And Technology

• Choi I‐h

  Department Of Materials Science Korea University

• Choi In-hoon

  Department Of Materials Science Korea University

• Zhao Jin

  Division Of Materials Science And Engineering Korea University

• Kim Yong

  Semiconductor Devices Laboratory Korea Institute Of Science And Technology

• Choi Hoon

  Semiconductor Lab.

• Lee J‐h

  Division Of Materials Science And Engineering Korea University

• Choi Hoon

  Division of Materials Science and Engineering, Korea University

• Lee Kwan

  Division of Materials Science and Engineering, Korea University

• Lee Jong-Han

  Division of Materials Science and Engineering, Korea University

• Choi In-Hoon

  Division of Materials Science and Engineering, Korea University

• Lee Jong-han

  Division Of Materials Science And Engineering Korea University

• Kim Yong

  Semiconductor Materials And Devices Laboratory Korea Institute Of Science And Technology

• Kim S‐i

  Korea Inst. Sci. And Technol. Seoul Kor

• Lee Jin-hee

  School Of Electrical Engineering Seoul National University

• Lee Kwan

  Division Of Materials Science And Engineering Korea University

• Choi In-Hoon

  Division of Material Science and Engineering, Korea University, 5-1 Anam-dong, Sungbuku-ku, Seoul 136-701, Korea

• Lee Kwan

  Semiconductor Device Lab., Korea Institute of Science and Technology

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