Investigation of Highly Strained InGaP/InGaAs p-HEMT Grown by Using A Reduced Area Growth
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概要
- 論文の詳細を見る
Characteristics of highly strained InGaP/In_<0.33>Ga_<0.67>As p-HEMTs grown on patterned GaAs substrates and conventional InGaP/In_<0.22>Ga_<0.78>As p-HEMTs grown on non-patterned GaAs substrates were investigated. The highly strained InGaP/In_<0.33>Ga_<0.67>As p-HEMT grown on the patterned GaAs substrates showed substantial improvements in device characteristics including DC(drain saturation current and transconductance), microwave(f_T and f_<max>), and low- and high-frequency noise characteristics compared with those of the conventional InGaP/In_<0.22>Ga_<0.78>As p-HEMT grown on the non-patterned GaAs substrates.
- 社団法人電子情報通信学会の論文
- 2001-06-30
著者
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Song J‐i
K‐jist Gwangju Kor
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Song Jong-in
Dept.of Information And Communications K-jist
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Kim J
Dept.of Information And Communications
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Kim Jeong
Dept.of Obstetrics & Gynecology, Catholic University Medical College
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Kim Jeong
Dept. Of Arch. Eng'g Kyung Hee University
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Jo Sung-june
Dept.of Information And Communications
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Kim Jeong
Dept.of Information And Communications K-jist
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Kim Sang-Soon
Dept.of Information and Communications, K-JIST
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Kim Sang-soon
Dept.of Information And Communications
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Song Jong-in
Dept. Of Information And Communications Gist
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