Jo Sung-june | Dept.of Information And Communications
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概要
関連著者
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Song J‐i
K‐jist Gwangju Kor
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Kim J
Dept.of Information And Communications
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Jo Sung-june
Dept.of Information And Communications
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Kim Jeong
Dept.of Information And Communications K-jist
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KIM Jeong
Department of Information Electronics Engineering, Ewha Womans University
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Song Jong-in
Department Of Information And Communications K-jist
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Kim Jeong
Department Of Anatomy Wonkwang University School Of Medicine
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JO Sung-June
Department of Information and Communications, K-JIST
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Kim Sang-soon
Dept.of Information And Communications
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Song Jong-in
Dept.of Information And Communications K-jist
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Kim Jeong
Dept.of Obstetrics & Gynecology, Catholic University Medical College
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Kim Jeong
Dept. Of Arch. Eng'g Kyung Hee University
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Kim Sang-Soon
Dept.of Information and Communications, K-JIST
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Song Jong-in
Dept. Of Information And Communications Gist
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SON Heesoo
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and T
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HONG Songcheol
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and T
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KIM Sang-Soon
R&D Group1, Mobile Communication Division, Samsung Electronics
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KANG Shin-Jae
Department of Information and Communications, K-JIST
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HAN Jae-Chun
Department of Information and Communications, K-JIST
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PARK Sung-Woong
NEOPTEK
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PARK Jinsung
Department of Electrical Engineering and Computer Science, KAIST
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Kang Shin-jae
Department Of Information And Communications K-jist
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Han Jae-chun
Department Of Information And Communications K-jist
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Hong Songcheol
Department Of Electrical Engineering And Computer Science Kaist
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Hong Songcheol
Department Of Electrical Engineering And Computer Science (eecs) Korea Advanced Institute Of Science
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Son Heesoo
Department Of Electrical Engineering And Computer Science Kaist
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Park Jinsung
Department Of Electrical Engineering And Computer Science Kaist
著作論文
- InGaP/InGaAs p-HEMTs Having Channel Layers Over the Critical Layer Thickness Grown on Patterned GaAs Substrates
- A Depletion-Mode In_Ga_As MOSFET with a Liquid Phase Oxidized Gate
- Reduced Dark Current Characteristics of a Norman-Incident In_Ga_As/GaAs QWIP Employing a p-i-n-i-p Camel Diode Structure
- Investigation of Highly Strained InGaP/InGaAs p-HEMT Grown by Using A Reduced Area Growth
- Investigation of Highly Strained InGaP/InGaAs p-HEMT Grown by Using A Reduced Area Growth