Hong Songcheol | Department Of Electrical Engineering And Computer Science (eecs) Korea Advanced Institute Of Science

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概要

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著作論文

An Optomechanical Pressure Sensor Using Multimode Interference Couplers
Optical Binary-Phase-Shift-Keying Modulation of 10 GHz Using an Integrated Hybrid Device
Low Voltage Actuated RF MEMS Switches Using Push-Pull Operation
Memory Operation of InAs Quantum Dot Field Effect Transistor
An Optomechanical Pressure Sensor Using Multi-Mode Interference Couplers
Quantum Well Infrared Photodetector with pHEMT structure
Distribution of Trapped Electron and Hole in Thin SiO_2 Film
Reduced Dark Current Characteristics of a Norman-Incident In_Ga_As/GaAs QWIP Employing a p-i-n-i-p Camel Diode Structure
Atomic Force Microscope Probe Tips Using Heavily Boron-Doped Silicon Cantilevers Realized in aBulk Silicon Wafer
Bias Dependence of Intermodulation Distortion Asymmetry in Heterojunction Bipolar Transistor Using Nonlinear Large-Signal Model
A Novel Linearization Method of Multiple Quantum Well (MQW) Electroabsorption Analog Modulator
A Thermal Resistance Measurement of HBT with Pulsed Current I-V Setup and Its Scalability with the Total Emitter Area
A Large-Signal Model of RF LDMOS with Skin Effects of Power Combining Structures(Session 6B Power Devices,AWAD2006)
A Large-Signal Model of RF LDMOS with Skin Effects of Power Combining Structures(Session 6B Power Devices,AWAD2006)
A Low Voltage Actuated Microelectromechanical Switch for RF Application
Velocity-Mismatching Effect on Extinction Characteristics of Traveling Wave Electroabsorption Modulator
A Study on Doping Density in InAs/GaAs Quantum Dot Infrared Photodetector
Memory Operation of InAs Quantum Dot Heterostructure Field Effect Transistor
Significance of Gate Oxide Thinning below 1.5 nm on $1/ f$ Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress

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