A Study on Doping Density in InAs/GaAs Quantum Dot Infrared Photodetector
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概要
- 論文の詳細を見る
We study the influence of doping density and the resulting optimum operation voltage on the performance of quantum dot infrared photodetectors (QDIPs). The optimum operation voltage, where detectivity becomes maximum, becomes smaller as the doping density increases. This is because the optimum dark current levels are similar regardless of the doping density. We confirmed experimentally that the optimum dark current level is ${\sim}5$ mA (current density: $\sim$A/cm2) for our samples. It is found that the higher doping density improves the performance in the range used in this experiment ($5\times 10^{16}$–$5\times 10^{17}$/cm3). The response to a normal incident light is confirmed and the possibility of high-temperature operation of QDIP is shown.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-08-15
著者
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Kim Hyung
Department Of Biochemistry Ewha Womans University School Of Medicine
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Lee Sang-jun
National Research Laboratory On Quantum Dot Technology Materials Evaluation Center
-
Lee Donghan
Department Of Physics Chungnam National University
-
Jang Yu
Department Of Information And Communication Engineering Dongguk University
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KIM Moondok
Department of Physics, Chungnam National University
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Noh Sam
National Research Laboratory On Quantum Dot Technology Materials Evaluation Center
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Hong Songcheol
Department Of Electrical Engineering And Computer Science (eecs) Korea Advanced Institute Of Science
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Oum Joon
Department Of Electrical Engineering And Computer Science Kaist
-
Kang Yong
Department Of Anatomy
-
Lee Uk
Department Of Chemistry National Fisheries University Of Pusan
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Park Chan
Department Of Anatomy College Of Medicine Kyung Hee University
-
Lee Uk
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea
-
Hong Songcheol
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea
-
Noh Sam
National Research Laboratory on Quantum Dot Technology, Materials Evaluation Center, Korea Research Institute of Standards and Science, Daejeon 305-340, Korea
-
Jang Yu
Department of Physics, Chungnam National University, Daejeon 305-764, Korea
-
Lee Donghan
Department of Physics, Chungnam National University, Daejeon 305-764, Korea
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Kim Moondok
Department of Physics, Chungnam National University, Daejeon 305-764, Korea
-
Lee Sang-Jun
National Research Laboratory on Quantum Dot Technology, Materials Evaluation Center, Korea Research Institute of Standards and Science, Daejeon 305-340, Korea
-
JANG Yu
Department of Information & Communication Engineering, Dongguk University
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