An Optomechanical Pressure Sensor Using Multi-Mode Interference Couplers

スポンサーリンク

概要

• 論文の詳細を見る
• 1998-09-07

著者

• YOON Euijoon

  School of Materials Science and Engineering, Seoul National University

• Yoon E

  Seoul National Univ. Seoul Kor

• Yoon Euijoon

  School Of Materials Science And Engineering And Isrc Seoul National University

• Yoon Euijoon

  School Of Material Science And Engineering Seoul National University

• Yoon Euijoon

  School Of Mat. Sci. And Eng. Seoul National Univ

• Hong S

  Samsung Electronics Co. Ltd. Kyeonggi‐do Kor

• YOON Euisik

  Department of Electrical Engineering & Computer Science, KAIST

• Hah Dooyoung

  Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te

• Hong S

  Sungkyunkwan Univ. Suwon Kor

• HONG Songcheol

  Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and T

• Hong Songcheol

  Department Of Electrical Engineering And Computer Science (eecs) Korea Advanced Institute Of Science

• Hong S

  Korea Advanced Inst. Of Sci. And Technol. (kaist) Daejeon Kor

関連論文

• Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Invited Nitride Semiconductor Nanostructures and Their Optical Properties (先端デバイスの基礎と応用に関するアジアワークショップ)
• Effects of Texturing and Microbridge length on the IR Responsivity of YBa_2Cu_3O_x Thin Film
• Thickness Effects on the Pyroelectric Properties of Chemical-Solution-Derived Pb(Zr_0.3,Ti_0.7)O_3 Thin Films for the Infra-Red Sensor Devices
• Dielectric and Electromechanical Properties of Pb(Zr,Ti)O_3 Thin Films for Piezo-Microelectromechanical System Devices
• Device Design Consideration for 50nm Dynamic Random Access Memory Using Bulk FinFET
• Possibility of TWO-Step As-Desorption from (001) InP Using Surface Photoabsorption : Surfaces. Interfaces, and Films
• Analysis of Surface Photoabsorption Spectra of (001) InP Surfaces
• Threshold Voltage Behavior of Body-Tied FinFET (OMEGA MOSFET) with Respect to Ion Implantation Conditions
• Thermally Driven Thin Film Bulk Acoustic Resonator Voltage Controlled Oscillators Integrated with Microheater Elements
• Hermetically Sealed Inductor-Capacitor (LC) Resonator for Remote Pressure Monitoring
• Monolithic Fabrication of Electroplated Solenoid Inductors Using Three-Dimensional Photolithography of a Thick Photoresist
• Comparison of the Strain-modified Band Gap Energies of Truncated and Untruncated InAs Quantum Dots in GaAs Matrix at Varying Inter-dot Spacings(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer
• Study on Energy Band of InGaN/GaN Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy
• Effects of Pb/Pt Top Electrode on Hydrogen-Induced Degradation in Pb(Zr, Ti)O_3(Semiconductors)
• An Optomechanical Pressure Sensor Using Multimode Interference Couplers
• First-Principles Study of Atomic and Electronic Structure of Ba/Si(111)(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Memory Operation of InAs Quantum Dot Heterostructure Field Effect Transistor
• Velocity-Mismatching Effect on Extinction Characteristics of Traveling Wave Electroabsorption Modulator
• Optical Binary-Phase-Shift-Keying Modulation of 10 GHz Using an Integrated Hybrid Device
• A Low Voltage Actuated Microelectromechanical Switch for RF Application
• Low Voltage Actuated RF MEMS Switches Using Push-Pull Operation
• Memory Operation of InAs Quantum Dot Field Effect Transistor
• Effects of Etching Time and Thickness on the Performance of the Microstrip Line Resonator of YBa_2Cu_3O_x Thin Films
• An Optomechanical Pressure Sensor Using Multi-Mode Interference Couplers
• Semi-empirical Device and Circuit Models for Ferroelectrics
• Semi-empirical Device and Circuit Models for Ferroelectrics
• Theoretical Comparison of (111) and (100) GaAs/AlGaAs p-Type Quantum Well Infrared Photodetectors
• Superior Detectivity of (111) GaAs/AlGaAs p-Type QW Infrared Photodetector
• Quantum Well Infrared Photodetector with pHEMT structure
• A Study on Doping Density in InAs/GaAs Quantum Dot Infrared Photodetector
• Isotropic/Anisotropic Selective Epitaxial Growth of Si on Local Oxidation of Silicon (LOCOS) Patterned Si (100) Substrate by Cold Wall Ultrahigh Vacuum Chemical Vapor Deposition (UHV-CVD)
• [Invited]Double-Gate MOSFETs for Nano CMOS Technology : Body-tied Double-Gate MOSFETs(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
• [Invited] Double-Gate MOSFETs for Nano CMOS Technology : Body-tied Double-Gate MOSFETs (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
• Distribution of Trapped Electron and Hole in Thin SiO_2 Film
• Reduced Dark Current Characteristics of a Norman-Incident In_Ga_As/GaAs QWIP Employing a p-i-n-i-p Camel Diode Structure
• Atomic Force Microscope Probe Tips Using Heavily Boron-Doped Silicon Cantilevers Realized in aBulk Silicon Wafer
• Bias Dependence of Intermodulation Distortion Asymmetry in Heterojunction Bipolar Transistor Using Nonlinear Large-Signal Model
• Significance of Gate Oxide Thinning below 1.5nm on 1/f Noise Behavior in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Electrical Stress
• Analysis of Heavy-Metal Ions Using Mercury Microelectrodes and a Solid-State Reference Electrode on a Si Wafer
• A Novel Linearization Method of Multiple Quantum Well (MQW) Electroabsorption Analog Modulator
• A Thermal Resistance Measurement of HBT with Pulsed Current I-V Setup and Its Scalability with the Total Emitter Area
• A Large-Signal Model of RF LDMOS with Skin Effects of Power Combining Structures(Session 6B Power Devices,AWAD2006)
• A Large-Signal Model of RF LDMOS with Skin Effects of Power Combining Structures(Session 6B Power Devices,AWAD2006)
• Thermally Driven Thin Film Bulk Acoustic Resonator Voltage Controlled Oscillators Integrated with Microheater Elements
• A Low Voltage Actuated Microelectromechanical Switch for RF Application
• Velocity-Mismatching Effect on Extinction Characteristics of Traveling Wave Electroabsorption Modulator
• A Study on Doping Density in InAs/GaAs Quantum Dot Infrared Photodetector
• Memory Operation of InAs Quantum Dot Heterostructure Field Effect Transistor
• Significance of Gate Oxide Thinning below 1.5 nm on $1/ f$ Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress

もっと見る 閉じる

スポンサーリンク