Effects of Pb/Pt Top Electrode on Hydrogen-Induced Degradation in Pb(Zr, Ti)O_3(Semiconductors)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-01-15

著者

• PARK Young

  Semiconductor Materials Laboratory, Nano-device Research Center, Korea Institute of Science and Tech

• YOON Euijoon

  School of Materials Science and Engineering, Seoul National University

• Yoon E

  Seoul National Univ. Seoul Kor

• Yoon Euijoon

  School Of Material Science And Engineering Seoul National University

• Lee S

  Samsung Electronics Co. Ltd. Kyungki‐do Kor

• Lee Sang

  Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd

• Lee Sang

  Semiconductor R&d Center Samsung Electronics Co. Ltd.

• Yoon Euijoon

  School Of Mat. Sci. And Eng. Seoul National Univ

• Lee Y

  Semiconductor R&d Division Samsung Electronics Co. Ltd.

• Lee S

  Samsung Electronics Co. Ltd. Kyungki Kor

• Lee Yong

  Semiconductor R&d Division Samsung Electronics Co. Ltd.

• YUH Hwan-Kuk

  School of Material Science and Engineering, Seoul National University

• Park Young

  Semiconductor R&d Division Samsung Electronics Co. Ltd.

• Park Young

  Semiconductor Materials Laboratory Korea Institute Of Science And Technology:department Of Physics K

• Yoon Euijoon

  School Of Electronic And Electrical Engineering Kyungpook National University

• Yuh Hwan-kuk

  School Of Material Science And Engineering Seoul National University

• Park Young

  Semicondactor Materials Laboratory Korea Insrirute Of Science And Technology

• Lee S.I.

  Semiconductor R&D Division, Samsung Electronics Co., Ltd.

• Lee Yong

  Semiconductor Physics Research Center and School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea

関連論文

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• Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Electrical characterization of indium-rich InGaN/GaN multi quantum wells (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Invited Nitride Semiconductor Nanostructures and Their Optical Properties (先端デバイスの基礎と応用に関するアジアワークショップ)
• Dependence of Buffer Layer on the Distribution of InAs Quantum Dots
• Facet Evolution of Al_Ga_As/GaAs Multilayers Grown on Mesa-Patterned GaAs Substrate
• Thickness Effects on the Pyroelectric Properties of Chemical-Solution-Derived Pb(Zr_0.3,Ti_0.7)O_3 Thin Films for the Infra-Red Sensor Devices
• Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
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• Deposition Characteristics of (Ba, Sr)TiO_3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures
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• Preparation and Characterization of Iridium Oxide Thin Films Grown by DC Reactive Sputtering
• Study on Energy Band of InGaN/GaN Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy
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