Improved Internal Quantum Efficiency of Green Emitting InGaN/GaN Multiple Quantum Wells by In Preflow for InGaN Well Growth
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概要
- 論文の詳細を見る
A series of green emitting In1-xGaxN/GaN multi-quantum wells (MQWs) has been grown by using low pressure metal organic chemical vapor deposition. Effects of In flow prior to InGaN well growth for a short duration on structural and optical properties of the MQWs have been studied. In pre-flow does not affect the structural properties such as In composition and interface abruptness of the InGaN/GaN MQW structure. But, it red shifts the photoluminescence (PL) emission peak of MQWs with increase of In pre-flow duration. For specific emission energy, the surface pit density of MQWs grown with In pre-flow is significantly lower than that of MQWs grown without In pre-flow. In pre-flow samples show about 30% enhancement of PL internal quantum efficiency in deep green region (${>}530$ nm) compared to MQWs grown without In pre-flow.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-02-25
著者
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Hong Chang-hee
Semiconductor Physics Research Center And Department Of Semiconductor Science And Technology Chonbuk
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Park Jae
Semiconductor Laboratory, Samsung Advanced Institute of Technology, Yongin, Gyeonggi 446-712, Korea
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Hong Chang-Hee
Semiconductor Physics Research Center and School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
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SUH Eun-Kyung
Semiconductor Physics Research Center and Department of Physics, Jeonbuk National University
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Senthil Kumar
Semiconductor Physics Research Center and School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
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Lee Yong
Semiconductor Physics Research Center and School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
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Chung Sang
Semiconductor Physics Research Center and School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
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Park Jae
Semiconductor Physics Research Center and School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
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